Electronic Angular Tunneling Effect
In this article we show that the probability for an electron tunneling a rectangular potential barrier depends on its angle of incidence measured with respect to the normal line. The majority of the studies in the field consider a one-dimensional tunneling of an electron of mass in a potential bar...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Universidade Federal de Viçosa (UFV)
2022-05-01
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| Series: | The Journal of Engineering and Exact Sciences |
| Subjects: | |
| Online Access: | https://periodicos.ufv.br/jcec/article/view/14294 |
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| _version_ | 1832569761110687744 |
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| author | Jorge Henrique de Oliveira Sales Cássio Almeida Lima Gislan Silveira Santos Alfredo Takashi Suzuki |
| author_facet | Jorge Henrique de Oliveira Sales Cássio Almeida Lima Gislan Silveira Santos Alfredo Takashi Suzuki |
| author_sort | Jorge Henrique de Oliveira Sales |
| collection | DOAJ |
| description |
In this article we show that the probability for an electron tunneling a rectangular potential barrier depends on its angle of incidence measured with respect to the normal line. The majority of the studies in the field consider a one-dimensional tunneling of an electron of mass in a potential barrier along the -axis. Using a two-dimensional approach, we observed that the angle of incidence of the electron influences the probability of tunneling.
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| format | Article |
| id | doaj-art-d53c3ade0548482da0cbcad30551ebf1 |
| institution | Kabale University |
| issn | 2527-1075 |
| language | English |
| publishDate | 2022-05-01 |
| publisher | Universidade Federal de Viçosa (UFV) |
| record_format | Article |
| series | The Journal of Engineering and Exact Sciences |
| spelling | doaj-art-d53c3ade0548482da0cbcad30551ebf12025-02-02T19:56:21ZengUniversidade Federal de Viçosa (UFV)The Journal of Engineering and Exact Sciences2527-10752022-05-018310.18540/jcecvl8iss3pp14294-01eElectronic Angular Tunneling EffectJorge Henrique de Oliveira Sales0Cássio Almeida Lima1Gislan Silveira Santos2Alfredo Takashi Suzuki3Universidade Estadual de Santa CruzInstituto Federal da BahiaInstituto Federal da BahiaLa Sierra University, Physics Department, Riverside, CA 92505, United States In this article we show that the probability for an electron tunneling a rectangular potential barrier depends on its angle of incidence measured with respect to the normal line. The majority of the studies in the field consider a one-dimensional tunneling of an electron of mass in a potential barrier along the -axis. Using a two-dimensional approach, we observed that the angle of incidence of the electron influences the probability of tunneling. https://periodicos.ufv.br/jcec/article/view/14294Potential barrierAngular TunnelingTwo-dimensional |
| spellingShingle | Jorge Henrique de Oliveira Sales Cássio Almeida Lima Gislan Silveira Santos Alfredo Takashi Suzuki Electronic Angular Tunneling Effect The Journal of Engineering and Exact Sciences Potential barrier Angular Tunneling Two-dimensional |
| title | Electronic Angular Tunneling Effect |
| title_full | Electronic Angular Tunneling Effect |
| title_fullStr | Electronic Angular Tunneling Effect |
| title_full_unstemmed | Electronic Angular Tunneling Effect |
| title_short | Electronic Angular Tunneling Effect |
| title_sort | electronic angular tunneling effect |
| topic | Potential barrier Angular Tunneling Two-dimensional |
| url | https://periodicos.ufv.br/jcec/article/view/14294 |
| work_keys_str_mv | AT jorgehenriquedeoliveirasales electronicangulartunnelingeffect AT cassioalmeidalima electronicangulartunnelingeffect AT gislansilveirasantos electronicangulartunnelingeffect AT alfredotakashisuzuki electronicangulartunnelingeffect |