Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive Device
Abstract Transition metal disulfide compounds (TMDCs) emerges as the promising candidate for new‐generation flexible (opto‐)electronic device fabrication. However, the harsh growth condition of TMDCs results in the necessity of using hard dielectric substrates, and thus the additional transfer proce...
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Wiley
2024-09-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202405050 |
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| author | Bingchen Lü Yang Chen Xiaobao Ma Zhiming Shi Shanli Zhang Yuping Jia Yahui Li Yuang Cheng Ke Jiang Wenwen Li Wei Zhang Yuanyuan Yue Shaojuan Li Xiaojuan Sun Dabing Li |
| author_facet | Bingchen Lü Yang Chen Xiaobao Ma Zhiming Shi Shanli Zhang Yuping Jia Yahui Li Yuang Cheng Ke Jiang Wenwen Li Wei Zhang Yuanyuan Yue Shaojuan Li Xiaojuan Sun Dabing Li |
| author_sort | Bingchen Lü |
| collection | DOAJ |
| description | Abstract Transition metal disulfide compounds (TMDCs) emerges as the promising candidate for new‐generation flexible (opto‐)electronic device fabrication. However, the harsh growth condition of TMDCs results in the necessity of using hard dielectric substrates, and thus the additional transfer process is essential but still challenging. Here, an efficient strategy for preparation and easy separation‐transfer of high‐uniform and quality‐enhanced MoS2 via the precursor pre‐annealing on the designed graphene inserting layer is demonstrated. Based on the novel strategy, it achieves the intact separation and transfer of a 2‐inch MoS2 array onto the flexible resin. It reveals that the graphene inserting layer not only enhances MoS2 quality but also decreases interfacial adhesion for easy separation‐transfer, which achieves a high yield of ≈99.83%. The theoretical calculations show that the chemical bonding formation at the growth interface has been eliminated by graphene. The separable graphene serves as a photocarrier transportation channel, making a largely enhanced responsivity up to 6.86 mA W−1, and the photodetector array also qualifies for imaging featured with high contrast. The flexible device exhibits high bending stability, which preserves almost 100% of initial performance after 5000 cycles. The proposed novel TMDCs growth and separation‐transfer strategy lightens their significance for advances in curved and wearable (opto‐)electronic applications. |
| format | Article |
| id | doaj-art-d3ff1d4518764a61aa3439fbc420d2af |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2024-09-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-d3ff1d4518764a61aa3439fbc420d2af2025-08-20T01:55:19ZengWileyAdvanced Science2198-38442024-09-011134n/an/a10.1002/advs.202405050Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive DeviceBingchen Lü0Yang Chen1Xiaobao Ma2Zhiming Shi3Shanli Zhang4Yuping Jia5Yahui Li6Yuang Cheng7Ke Jiang8Wenwen Li9Wei Zhang10Yuanyuan Yue11Shaojuan Li12Xiaojuan Sun13Dabing Li14Key Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Automobile Materials MOE and School of Materials Science & Engineering and Electron Microscopy Center and International Center of Future Science and Jilin Provincial International Cooperation Key Laboratory of High‐Efficiency Clean Energy Materials Jilin University Changchun 130012 P. R. ChinaKey Laboratory of Automobile Materials MOE and School of Materials Science & Engineering and Electron Microscopy Center and International Center of Future Science and Jilin Provincial International Cooperation Key Laboratory of High‐Efficiency Clean Energy Materials Jilin University Changchun 130012 P. R. ChinaSchool of Management Science and Information Engineering Jilin University of Finance and Economics Changchun 130117 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaKey Laboratory of Luminescence Science and TechnologyChinese Academy of Sciences & State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033 P. R. ChinaAbstract Transition metal disulfide compounds (TMDCs) emerges as the promising candidate for new‐generation flexible (opto‐)electronic device fabrication. However, the harsh growth condition of TMDCs results in the necessity of using hard dielectric substrates, and thus the additional transfer process is essential but still challenging. Here, an efficient strategy for preparation and easy separation‐transfer of high‐uniform and quality‐enhanced MoS2 via the precursor pre‐annealing on the designed graphene inserting layer is demonstrated. Based on the novel strategy, it achieves the intact separation and transfer of a 2‐inch MoS2 array onto the flexible resin. It reveals that the graphene inserting layer not only enhances MoS2 quality but also decreases interfacial adhesion for easy separation‐transfer, which achieves a high yield of ≈99.83%. The theoretical calculations show that the chemical bonding formation at the growth interface has been eliminated by graphene. The separable graphene serves as a photocarrier transportation channel, making a largely enhanced responsivity up to 6.86 mA W−1, and the photodetector array also qualifies for imaging featured with high contrast. The flexible device exhibits high bending stability, which preserves almost 100% of initial performance after 5000 cycles. The proposed novel TMDCs growth and separation‐transfer strategy lightens their significance for advances in curved and wearable (opto‐)electronic applications.https://doi.org/10.1002/advs.202405050flexible devicegrapheneinterfacial adhesionmechanical separation‐transferMoS2 |
| spellingShingle | Bingchen Lü Yang Chen Xiaobao Ma Zhiming Shi Shanli Zhang Yuping Jia Yahui Li Yuang Cheng Ke Jiang Wenwen Li Wei Zhang Yuanyuan Yue Shaojuan Li Xiaojuan Sun Dabing Li Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive Device Advanced Science flexible device graphene interfacial adhesion mechanical separation‐transfer MoS2 |
| title | Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive Device |
| title_full | Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive Device |
| title_fullStr | Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive Device |
| title_full_unstemmed | Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive Device |
| title_short | Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive Device |
| title_sort | wafer scale growth and transfer of high quality mos2 array by interface design for high stability flexible photosensitive device |
| topic | flexible device graphene interfacial adhesion mechanical separation‐transfer MoS2 |
| url | https://doi.org/10.1002/advs.202405050 |
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