Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity
Abstract Green energy collection is crucial for achieving future net‐zero carbon emissions, with energy harvesting being a key solution. Silicon, a widely used p‐type semiconductor doped with boron ions, is prevalent in modern electronics. However, the impact of lattice boundaries from ion implantat...
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Wiley-VCH
2024-12-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400536 |
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| author | Shang Yu Tsai Po‐Hsien Tseng Chun Chi Chen Cheng‐Ming Huang Hung‐Wei Yen Yi‐Sheng Chen Kun‐Lin Lin Ranming Niu Yu‐Sheng Lai Fu‐Hsiang Ko |
| author_facet | Shang Yu Tsai Po‐Hsien Tseng Chun Chi Chen Cheng‐Ming Huang Hung‐Wei Yen Yi‐Sheng Chen Kun‐Lin Lin Ranming Niu Yu‐Sheng Lai Fu‐Hsiang Ko |
| author_sort | Shang Yu Tsai |
| collection | DOAJ |
| description | Abstract Green energy collection is crucial for achieving future net‐zero carbon emissions, with energy harvesting being a key solution. Silicon, a widely used p‐type semiconductor doped with boron ions, is prevalent in modern electronics. However, the impact of lattice boundaries from ion implantation doping on thermoelectric properties remains underexplored. A heavily boron‐doped silicon layer is used to enhance thermoelectric performance. The layers, formed on silicon, exhibit epitaxial crystal structures under all doping conditions using an ion implantation system. Transmission electron microscopy and atom probe tomography reveal that boron interstitial structures create boundaries in the silicon lattice. These boundaries effectively reduce the thermal conductivity of boron‐doped silicon compared to intrinsic silicon. At 372.76 K, the best power factor of the heavily boron‐doped silicon layer is 3.05 mW/m·K2, obtained at an implant dose of 1016 cm−2. This study demonstrates the raised electrical conductivity is induced by effectively substituting silicon with boron atoms, and the reduced thermal conductivity is caused by boron interstitial‐formed boundaries in silicon. These findings highlight the potential of heavily boron‐doped silicon in improving thermoelectric materials and advancing energy‐efficient technologies. |
| format | Article |
| id | doaj-art-d3efc12db150407e8caf02ff9af5bebb |
| institution | OA Journals |
| issn | 2196-7350 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-d3efc12db150407e8caf02ff9af5bebb2025-08-20T02:32:12ZengWiley-VCHAdvanced Materials Interfaces2196-73502024-12-011136n/an/a10.1002/admi.202400536Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal ConductivityShang Yu Tsai0Po‐Hsien Tseng1Chun Chi Chen2Cheng‐Ming Huang3Hung‐Wei Yen4Yi‐Sheng Chen5Kun‐Lin Lin6Ranming Niu7Yu‐Sheng Lai8Fu‐Hsiang Ko9Department of Materials Science and Engineering National Yang Ming Chiao Tung University 1001 University Road Hsinchu 30010 TaiwanDepartment of Materials Science and Engineering National Yang Ming Chiao Tung University 1001 University Road Hsinchu 30010 TaiwanTaiwan Semiconductor Research Institute Hsinchu 30010 TaiwanTaiwan Semiconductor Research Institute Hsinchu 30010 TaiwanDepartment of Materials Science and Engineering National Taiwan University Taipei 10617 TaiwanSchool of Aerospace Mechanical and Mechatronic Engineering The University of Sydney Sydney NSW 2006 AustraliaTaiwan Semiconductor Research Institute Hsinchu 30010 TaiwanSchool of Aerospace Mechanical and Mechatronic Engineering The University of Sydney Sydney NSW 2006 AustraliaTaiwan Semiconductor Research Institute Hsinchu 30010 TaiwanDepartment of Materials Science and Engineering National Yang Ming Chiao Tung University 1001 University Road Hsinchu 30010 TaiwanAbstract Green energy collection is crucial for achieving future net‐zero carbon emissions, with energy harvesting being a key solution. Silicon, a widely used p‐type semiconductor doped with boron ions, is prevalent in modern electronics. However, the impact of lattice boundaries from ion implantation doping on thermoelectric properties remains underexplored. A heavily boron‐doped silicon layer is used to enhance thermoelectric performance. The layers, formed on silicon, exhibit epitaxial crystal structures under all doping conditions using an ion implantation system. Transmission electron microscopy and atom probe tomography reveal that boron interstitial structures create boundaries in the silicon lattice. These boundaries effectively reduce the thermal conductivity of boron‐doped silicon compared to intrinsic silicon. At 372.76 K, the best power factor of the heavily boron‐doped silicon layer is 3.05 mW/m·K2, obtained at an implant dose of 1016 cm−2. This study demonstrates the raised electrical conductivity is induced by effectively substituting silicon with boron atoms, and the reduced thermal conductivity is caused by boron interstitial‐formed boundaries in silicon. These findings highlight the potential of heavily boron‐doped silicon in improving thermoelectric materials and advancing energy‐efficient technologies.https://doi.org/10.1002/admi.202400536atom probe tomographyblock of phonon penetrationboron interstitial‐formed boundariesheavily boron‐doped silicon layerthermoelectricity |
| spellingShingle | Shang Yu Tsai Po‐Hsien Tseng Chun Chi Chen Cheng‐Ming Huang Hung‐Wei Yen Yi‐Sheng Chen Kun‐Lin Lin Ranming Niu Yu‐Sheng Lai Fu‐Hsiang Ko Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity Advanced Materials Interfaces atom probe tomography block of phonon penetration boron interstitial‐formed boundaries heavily boron‐doped silicon layer thermoelectricity |
| title | Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity |
| title_full | Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity |
| title_fullStr | Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity |
| title_full_unstemmed | Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity |
| title_short | Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity |
| title_sort | lattice boundary enhancement on thermoelectric behaviors of heavily boron doped silicon for energy harvesting electrical versus thermal conductivity |
| topic | atom probe tomography block of phonon penetration boron interstitial‐formed boundaries heavily boron‐doped silicon layer thermoelectricity |
| url | https://doi.org/10.1002/admi.202400536 |
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