Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance
Abstract The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements,...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-02-01
|
| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-024-00506-4 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849715701665759232 |
|---|---|
| author | Robert K. A. Bennett Lauren Hoang Connor Cremers Andrew J. Mannix Eric Pop |
| author_facet | Robert K. A. Bennett Lauren Hoang Connor Cremers Andrew J. Mannix Eric Pop |
| author_sort | Robert K. A. Bennett |
| collection | DOAJ |
| description | Abstract The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs|, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs|, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×. |
| format | Article |
| id | doaj-art-d3b23e8c88bd4e32a0c5036e4da6cf22 |
| institution | DOAJ |
| issn | 2397-7132 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-d3b23e8c88bd4e32a0c5036e4da6cf222025-08-20T03:13:14ZengNature Portfolionpj 2D Materials and Applications2397-71322025-02-01911710.1038/s41699-024-00506-4Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistanceRobert K. A. Bennett0Lauren Hoang1Connor Cremers2Andrew J. Mannix3Eric Pop4Department of Electrical Engineering, Stanford UniversityDepartment of Electrical Engineering, Stanford UniversityDepartment of Electrical Engineering, Stanford UniversityDepartment of Materials Science and Engineering, Stanford UniversityDepartment of Electrical Engineering, Stanford UniversityAbstract The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs|, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs|, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×.https://doi.org/10.1038/s41699-024-00506-4 |
| spellingShingle | Robert K. A. Bennett Lauren Hoang Connor Cremers Andrew J. Mannix Eric Pop Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance npj 2D Materials and Applications |
| title | Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance |
| title_full | Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance |
| title_fullStr | Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance |
| title_full_unstemmed | Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance |
| title_short | Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance |
| title_sort | mobility and threshold voltage extraction in transistors with gate voltage dependent contact resistance |
| url | https://doi.org/10.1038/s41699-024-00506-4 |
| work_keys_str_mv | AT robertkabennett mobilityandthresholdvoltageextractionintransistorswithgatevoltagedependentcontactresistance AT laurenhoang mobilityandthresholdvoltageextractionintransistorswithgatevoltagedependentcontactresistance AT connorcremers mobilityandthresholdvoltageextractionintransistorswithgatevoltagedependentcontactresistance AT andrewjmannix mobilityandthresholdvoltageextractionintransistorswithgatevoltagedependentcontactresistance AT ericpop mobilityandthresholdvoltageextractionintransistorswithgatevoltagedependentcontactresistance |