Research on the Temperature Characteristics of 1 200 V 4H-SiC Junction Barrier Schottky Diode

Research on the Temperature Characteristics of 1 200 V 4H-SiC Junction Barrier Schottky Diode

In order to research the effect of temperature on static electrical parameters of 4H–SiC junction barrier Schottky (JBS) diode,1.2 kV 4H–SiC JBS diodes were fabricated and their current-voltage characteristics were measured in the range of 25 ℃ ~150 ℃ . The results illustrate the forward current is...

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Bibliographic Details
Main Authors: YUAN Hao, SONG Qingwen, TANG Xiaoyan, YUAN Lei, ZHANG Yimen, ZHANG Yuming
Format: Article
Language:zho
Published: Editorial Office of Control and Information Technology 2016-01-01
Series:Kongzhi Yu Xinxi Jishu
Subjects:
4H-SiC
JBS
temperature characteristic
Online Access:http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.012
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