Bipolar to unipolar conversion in superjunction MOSFETs during resonant switching
Superjunction MOSFETs have been one of the promising switching components for realizing resonant converters. In spite of the numerous studies about the resonant converters in power electronics, the detailed current flow in the device has been still unclear, especially for the inner-current circulati...
Saved in:
| Main Authors: | H. Kang, F. Udrea |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
|
| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370424000166 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations
by: Marco Boccarossa, et al.
Published: (2025-02-01) -
C<sub>OSS</sub> Losses in Resonant Converters
by: Giuseppe Samperi, et al.
Published: (2025-06-01) -
Recent research progress of SiC superjunction devices
by: ZHANG Jinping, et al.
Published: (2023-09-01) -
IGBTs: Concept, Development and New Structures
by: Florin Udrea
Published: (2017-01-01) -
Frequency Domain Model of a Resonant LCC-S Converter for High-Frequency Wireless Power Transfer Applications Considering Switching Losses in MOSFETs Bridge
by: Vittorio Bertolini, et al.
Published: (2025-05-01)