THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS

The simulation of the photoluminescence and dark current-voltage characteristics of heterostructures with a single layer of quantum dots. The presence of the peak quantum transitions in the main points at 1,2 eV (modeling) and 1,12 eV (experimental). The experimental peak has a greater width (0,13 e...

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Main Authors: Leonid Lunin, Eduard Blokhin, Alexander Pashchenko
Format: Article
Language:Russian
Published: North Caucasus Federal University 2022-05-01
Series:Вестник Северо-Кавказского федерального университета
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Online Access:https://vestnikskfu.elpub.ru/jour/article/view/1004
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author Leonid Lunin
Eduard Blokhin
Alexander Pashchenko
author_facet Leonid Lunin
Eduard Blokhin
Alexander Pashchenko
author_sort Leonid Lunin
collection DOAJ
description The simulation of the photoluminescence and dark current-voltage characteristics of heterostructures with a single layer of quantum dots. The presence of the peak quantum transitions in the main points at 1,2 eV (modeling) and 1,12 eV (experimental). The experimental peak has a greater width (0,13 eV) at half maximum fundamental radiation transitions in quantum dots, compared to the modeled (0,06 eV). There is a shift of the experimental peak to longer wavelengths by about 65 meV, indicating that the presence in the dispersion structure the size of quantum dots. The dark current-voltage simulated characteristic at a temperature of 90 K and zero bias shows the value of the dark current density of 10-7 A/cm2, which is much smaller than the measurement results (10-6 A/cm2). There is a difference in the nature of the distribution depending on when the negative and positive displacement between experiment and simulation results associated with the presence of quantum dots larger.
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institution Kabale University
issn 2307-907X
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publishDate 2022-05-01
publisher North Caucasus Federal University
record_format Article
series Вестник Северо-Кавказского федерального университета
spelling doaj-art-d2e001ffb7204e338301baa75fad84902025-08-20T03:37:38ZrusNorth Caucasus Federal UniversityВестник Северо-Кавказского федерального университета2307-907X2022-05-010231361002THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTSLeonid Lunin0Eduard Blokhin1Alexander Pashchenko2North Caucasus Federal UnivercityPlatov South-Russian State Polytechnic UniversitySouthern Scientific Center RASThe simulation of the photoluminescence and dark current-voltage characteristics of heterostructures with a single layer of quantum dots. The presence of the peak quantum transitions in the main points at 1,2 eV (modeling) and 1,12 eV (experimental). The experimental peak has a greater width (0,13 eV) at half maximum fundamental radiation transitions in quantum dots, compared to the modeled (0,06 eV). There is a shift of the experimental peak to longer wavelengths by about 65 meV, indicating that the presence in the dispersion structure the size of quantum dots. The dark current-voltage simulated characteristic at a temperature of 90 K and zero bias shows the value of the dark current density of 10-7 A/cm2, which is much smaller than the measurement results (10-6 A/cm2). There is a difference in the nature of the distribution depending on when the negative and positive displacement between experiment and simulation results associated with the presence of quantum dots larger.https://vestnikskfu.elpub.ru/jour/article/view/1004квантовая точкамоделированиевольтамперная характеристикафотолюминесценцияфотодетекторближний ик диапазонquantum dotcurrent-voltage characteristicphotoluminescencephotodetectornear-infrared
spellingShingle Leonid Lunin
Eduard Blokhin
Alexander Pashchenko
THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS
Вестник Северо-Кавказского федерального университета
квантовая точка
моделирование
вольтамперная характеристика
фотолюминесценция
фотодетектор
ближний ик диапазон
quantum dot
current-voltage characteristic
photoluminescence
photodetector
near-infrared
title THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS
title_full THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS
title_fullStr THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS
title_full_unstemmed THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS
title_short THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS
title_sort photoluminescence and dark current voltage characteristics of heterostructures with inas quantum dots
topic квантовая точка
моделирование
вольтамперная характеристика
фотолюминесценция
фотодетектор
ближний ик диапазон
quantum dot
current-voltage characteristic
photoluminescence
photodetector
near-infrared
url https://vestnikskfu.elpub.ru/jour/article/view/1004
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