Wang, P., Li, C., Deng, C., Yang, Q., Xu, S., Tang, X., . . . Yu, H. Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. MDPI AG.
Chicago Style (17th ed.) CitationWang, Peiran, et al. Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. MDPI AG.
MLA (9th ed.) CitationWang, Peiran, et al. Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. MDPI AG.
Warning: These citations may not always be 100% accurate.