Investigation of key performance metrics in TiOX/TiN based resistive random-access memory cells
Abstract Resistive random-access memory (RRAM) is a promising beyond-CMOS technology due to its non-volatility, scalability, and high ON/OFF ratio. Furthermore, a single RRAM cell can operate as an analog resistor, meaning that it can be used in more novel computing applications such as tunable syna...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-07925-3 |
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