On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector

On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector

The advantages of on-chip integrated photodetectors, such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN mi...

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Bibliographic Details
Main Authors: Tong Xu, Shulin Sha, Kai Tang, Xuefeng Fan, Jinguo Liu, Caixia Kan, Gangyi Zhu, Feifei Qin, Daning Shi, Mingming Jiang
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Chip
Subjects:
GaN-on-Si
High-performance photodetector
Plasmonic effect
On-chip integration
Self-powered operation
Online Access:http://www.sciencedirect.com/science/article/pii/S2709472324000364
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