On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector
The advantages of on-chip integrated photodetectors, such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN mi...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-03-01
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| Series: | Chip |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2709472324000364 |
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| author | Tong Xu Shulin Sha Kai Tang Xuefeng Fan Jinguo Liu Caixia Kan Gangyi Zhu Feifei Qin Daning Shi Mingming Jiang |
| author_facet | Tong Xu Shulin Sha Kai Tang Xuefeng Fan Jinguo Liu Caixia Kan Gangyi Zhu Feifei Qin Daning Shi Mingming Jiang |
| author_sort | Tong Xu |
| collection | DOAJ |
| description | The advantages of on-chip integrated photodetectors, such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer, with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes. When illuminated upon ultraviolet light at 0 V bias, the Pt/GaN device exhibits significant photovoltaic performances, including a peak responsivity of 200.1 mA W−1, external quantum efficiency of 65%, and other figures-of-merit. Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band, which considerably improves its photoresponse performance and robustness in application. To realize the multipurpose capability of the devices, we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU. Moreover, the prepared devices can be used as optical data receivers for optical communication. These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications. |
| format | Article |
| id | doaj-art-d1d62175dddf425088dfc7bc5622c029 |
| institution | Kabale University |
| issn | 2709-4723 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Chip |
| spelling | doaj-art-d1d62175dddf425088dfc7bc5622c0292025-02-12T05:33:06ZengElsevierChip2709-47232025-03-0141100118On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetectorTong Xu0Shulin Sha1Kai Tang2Xuefeng Fan3Jinguo Liu4Caixia Kan5Gangyi Zhu6Feifei Qin7Daning Shi8Mingming Jiang9College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, ChinaCollege of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, ChinaCollege of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, ChinaPeter Grünberg Research Centre, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 211106, ChinaCollege of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, ChinaCollege of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, ChinaPeter Grünberg Research Centre, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 211106, China; Corresponding authors.Peter Grünberg Research Centre, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 211106, ChinaCollege of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China; Corresponding authors.College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China; Corresponding authors.The advantages of on-chip integrated photodetectors, such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer, with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes. When illuminated upon ultraviolet light at 0 V bias, the Pt/GaN device exhibits significant photovoltaic performances, including a peak responsivity of 200.1 mA W−1, external quantum efficiency of 65%, and other figures-of-merit. Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band, which considerably improves its photoresponse performance and robustness in application. To realize the multipurpose capability of the devices, we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU. Moreover, the prepared devices can be used as optical data receivers for optical communication. These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.http://www.sciencedirect.com/science/article/pii/S2709472324000364GaN-on-SiHigh-performance photodetectorPlasmonic effectOn-chip integrationSelf-powered operation |
| spellingShingle | Tong Xu Shulin Sha Kai Tang Xuefeng Fan Jinguo Liu Caixia Kan Gangyi Zhu Feifei Qin Daning Shi Mingming Jiang On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector Chip GaN-on-Si High-performance photodetector Plasmonic effect On-chip integration Self-powered operation |
| title | On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector |
| title_full | On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector |
| title_fullStr | On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector |
| title_full_unstemmed | On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector |
| title_short | On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector |
| title_sort | on chip integrated plasmon induced high performance self powered pt gan ultraviolet photodetector |
| topic | GaN-on-Si High-performance photodetector Plasmonic effect On-chip integration Self-powered operation |
| url | http://www.sciencedirect.com/science/article/pii/S2709472324000364 |
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