Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
Aluminium Gallium Nitride (AlGaN) based light emitting diodes (LED) are the enabling technology for compact emitters of deep ultraviolet (DUV) radiation and are in high demand for environmental and medical applications. The efficiency of recent DUV LEDs is in the range of a few percent providing som...
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10387666/ |
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| author | Friedhard Romer Gregor Hofmann Jakob Hopfner Marcel Schilling Anton Muhin Tim Wernicke Michael Kneissl Bernd Witzigmann |
| author_facet | Friedhard Romer Gregor Hofmann Jakob Hopfner Marcel Schilling Anton Muhin Tim Wernicke Michael Kneissl Bernd Witzigmann |
| author_sort | Friedhard Romer |
| collection | DOAJ |
| description | Aluminium Gallium Nitride (AlGaN) based light emitting diodes (LED) are the enabling technology for compact emitters of deep ultraviolet (DUV) radiation and are in high demand for environmental and medical applications. The efficiency of recent DUV LEDs is in the range of a few percent providing some potential for improvement. Apart from the light extraction efficiency the hole injection into the active region presents a major obstacle towards more efficient DUV LEDs. In this work, we investigate the emission spectra of a mixed multi quantum well (MQW) DUV LED to attain details on the active region carrier transport that allow an improvement of the hole injection. Changing the position of the long wavelength marker quantum well yields characteristic emission spectra which have been modelled with a multi scale carrier transport and luminescence simulator. The numerical modelling enables the extraction of opaque carrier transport characteristics in AlGaN such as the hole mobility in the highly doped barriers of the MQW. |
| format | Article |
| id | doaj-art-d1917a71b47149ce8fee6f669ff2f7c9 |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-d1917a71b47149ce8fee6f669ff2f7c92025-08-20T03:15:51ZengIEEEIEEE Photonics Journal1943-06552024-01-011611610.1109/JPHOT.2024.335196510387666Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting DiodeFriedhard Romer0https://orcid.org/0009-0001-5665-0083Gregor Hofmann1Jakob Hopfner2https://orcid.org/0000-0001-8185-0821Marcel Schilling3Anton Muhin4https://orcid.org/0000-0002-2389-0232Tim Wernicke5https://orcid.org/0000-0002-5472-8166Michael Kneissl6https://orcid.org/0000-0003-1476-598XBernd Witzigmann7https://orcid.org/0000-0001-9705-9516Lehrstuhl für Optoelektronik, Department EEI, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanyLehrstuhl für Optoelektronik, Department EEI, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyInstitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyLehrstuhl für Optoelektronik, Department EEI, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanyAluminium Gallium Nitride (AlGaN) based light emitting diodes (LED) are the enabling technology for compact emitters of deep ultraviolet (DUV) radiation and are in high demand for environmental and medical applications. The efficiency of recent DUV LEDs is in the range of a few percent providing some potential for improvement. Apart from the light extraction efficiency the hole injection into the active region presents a major obstacle towards more efficient DUV LEDs. In this work, we investigate the emission spectra of a mixed multi quantum well (MQW) DUV LED to attain details on the active region carrier transport that allow an improvement of the hole injection. Changing the position of the long wavelength marker quantum well yields characteristic emission spectra which have been modelled with a multi scale carrier transport and luminescence simulator. The numerical modelling enables the extraction of opaque carrier transport characteristics in AlGaN such as the hole mobility in the highly doped barriers of the MQW.https://ieeexplore.ieee.org/document/10387666/Light emitting diodedeep ultravioletcarrier transportIII-Nitridenumerical modelling |
| spellingShingle | Friedhard Romer Gregor Hofmann Jakob Hopfner Marcel Schilling Anton Muhin Tim Wernicke Michael Kneissl Bernd Witzigmann Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode IEEE Photonics Journal Light emitting diode deep ultraviolet carrier transport III-Nitride numerical modelling |
| title | Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode |
| title_full | Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode |
| title_fullStr | Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode |
| title_full_unstemmed | Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode |
| title_short | Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode |
| title_sort | carrier transport in a deep ultraviolet mixed quantum well light emitting diode |
| topic | Light emitting diode deep ultraviolet carrier transport III-Nitride numerical modelling |
| url | https://ieeexplore.ieee.org/document/10387666/ |
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