Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach
We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/819637 |
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| author | Aniruddha Singh Kushwaha Pramila Mahala Chenna Dhanavantri |
| author_facet | Aniruddha Singh Kushwaha Pramila Mahala Chenna Dhanavantri |
| author_sort | Aniruddha Singh Kushwaha |
| collection | DOAJ |
| description | We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar cell characteristic parameters for cell area of 1 × 1 mm2 are open circuit voltage of 2.26 V, short circuit current density of 3.31 mA/cm2, fill factor of 84.6%, and efficiency of 6.43% with interdigitated grid pattern. |
| format | Article |
| id | doaj-art-d171415bb58144f4b9016acdfee3a393 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-d171415bb58144f4b9016acdfee3a3932025-02-03T01:12:42ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/819637819637Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation ApproachAniruddha Singh Kushwaha0Pramila Mahala1Chenna Dhanavantri2Indian Institute of Technology, Bombay (IIT-B) Powai, Maharashtra 400076, IndiaSchool of Solar Energy, Pandit Deendayal Petroleum University (PDPU), Gandhinagar, Gujarat 382007, IndiaAcademy of Scientific and Innovative Research, New Delhi 110001, IndiaWe have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar cell characteristic parameters for cell area of 1 × 1 mm2 are open circuit voltage of 2.26 V, short circuit current density of 3.31 mA/cm2, fill factor of 84.6%, and efficiency of 6.43% with interdigitated grid pattern.http://dx.doi.org/10.1155/2014/819637 |
| spellingShingle | Aniruddha Singh Kushwaha Pramila Mahala Chenna Dhanavantri Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach International Journal of Photoenergy |
| title | Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach |
| title_full | Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach |
| title_fullStr | Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach |
| title_full_unstemmed | Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach |
| title_short | Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach |
| title_sort | optimization of p gan ingan n gan double heterojunction p i n solar cell for high efficiency simulation approach |
| url | http://dx.doi.org/10.1155/2014/819637 |
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