Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track Template
In this study, chemical deposition was used to synthesize structures of Ga<sub>2</sub>O<sub>3</sub> -NW/SiO<sub>2</sub>/Si (NW—nanowire) at 348 K and SnO<sub>2</sub>-NW/SiO<sub>2</sub>/Si at 323 K in track templates SiO<sub>2</sub&...
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2024-12-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/14/12/1087 |
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| author | Alma Dauletbekova Diana Junisbekova Zein Baimukhanov Aivaras Kareiva Anatoli I. Popov Alexander Platonenko Abdirash Akilbekov Ainash Abdrakhmetova Gulnara Aralbayeva Zhanymgul Koishybayeva Jonibek Khamdamov |
| author_facet | Alma Dauletbekova Diana Junisbekova Zein Baimukhanov Aivaras Kareiva Anatoli I. Popov Alexander Platonenko Abdirash Akilbekov Ainash Abdrakhmetova Gulnara Aralbayeva Zhanymgul Koishybayeva Jonibek Khamdamov |
| author_sort | Alma Dauletbekova |
| collection | DOAJ |
| description | In this study, chemical deposition was used to synthesize structures of Ga<sub>2</sub>O<sub>3</sub> -NW/SiO<sub>2</sub>/Si (NW—nanowire) at 348 K and SnO<sub>2</sub>-NW/SiO<sub>2</sub>/Si at 323 K in track templates SiO<sub>2</sub>/Si (either n- or p-type). The resulting crystalline nanowires were δ-Ga<sub>2</sub>O<sub>3</sub> and orthorhombic SnO<sub>2</sub>. Computer modeling of the delta phase of gallium oxide yielded a lattice parameter of a = 9.287 Å, which closely matched the experimental range of 9.83–10.03 Å. The bandgap is indirect with an Eg = 5.5 eV. The photoluminescence spectra of both nanostructures exhibited a complex band when excited by light with λ = 5.16 eV, dominated by luminescence from vacancy-type defects. The current–voltage characteristics of δ-Ga<sub>2</sub>O<sub>3</sub> NW/SiO<sub>2</sub>/Si-p showed one-way conductivity. This structure could be advantageous in devices where a reverse current is undesirable. The p-n junction with a complex structure was formed. This junction consists of a polycrystalline nanowire base exhibiting n-type conductivity and a monocrystalline Si substrate with p-type conductivity. The I–V characteristics of SnO<sub>2</sub>-NW/SiO<sub>2</sub>/Si suggested near-metallic conductivity due to the presence of metallic tin. |
| format | Article |
| id | doaj-art-d0efd77da98c40458fba9c2ec2eff0fd |
| institution | DOAJ |
| issn | 2073-4352 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
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| series | Crystals |
| spelling | doaj-art-d0efd77da98c40458fba9c2ec2eff0fd2025-08-20T02:55:32ZengMDPI AGCrystals2073-43522024-12-011412108710.3390/cryst14121087Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track TemplateAlma Dauletbekova0Diana Junisbekova1Zein Baimukhanov2Aivaras Kareiva3Anatoli I. Popov4Alexander Platonenko5Abdirash Akilbekov6Ainash Abdrakhmetova7Gulnara Aralbayeva8Zhanymgul Koishybayeva9Jonibek Khamdamov10Department of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanFaculty of Chemistry and Geosciences, University of Vilnius, Naugarduko Str. 24, LT-03225 Vilnius, LithuaniaInstitute of Solid-State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga, LatviaInstitute of Solid-State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga, LatviaDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Yangi Almazar Str., 20, Tashkent 10005, UzbekistanIn this study, chemical deposition was used to synthesize structures of Ga<sub>2</sub>O<sub>3</sub> -NW/SiO<sub>2</sub>/Si (NW—nanowire) at 348 K and SnO<sub>2</sub>-NW/SiO<sub>2</sub>/Si at 323 K in track templates SiO<sub>2</sub>/Si (either n- or p-type). The resulting crystalline nanowires were δ-Ga<sub>2</sub>O<sub>3</sub> and orthorhombic SnO<sub>2</sub>. Computer modeling of the delta phase of gallium oxide yielded a lattice parameter of a = 9.287 Å, which closely matched the experimental range of 9.83–10.03 Å. The bandgap is indirect with an Eg = 5.5 eV. The photoluminescence spectra of both nanostructures exhibited a complex band when excited by light with λ = 5.16 eV, dominated by luminescence from vacancy-type defects. The current–voltage characteristics of δ-Ga<sub>2</sub>O<sub>3</sub> NW/SiO<sub>2</sub>/Si-p showed one-way conductivity. This structure could be advantageous in devices where a reverse current is undesirable. The p-n junction with a complex structure was formed. This junction consists of a polycrystalline nanowire base exhibiting n-type conductivity and a monocrystalline Si substrate with p-type conductivity. The I–V characteristics of SnO<sub>2</sub>-NW/SiO<sub>2</sub>/Si suggested near-metallic conductivity due to the presence of metallic tin.https://www.mdpi.com/2073-4352/14/12/1087nanoheterostructureoxide semiconductorstrack template SiO<sub>2</sub>/Siδ-Ga<sub>2</sub>O<sub>3</sub>orthorhombic SnO<sub>2</sub>photoluminescence |
| spellingShingle | Alma Dauletbekova Diana Junisbekova Zein Baimukhanov Aivaras Kareiva Anatoli I. Popov Alexander Platonenko Abdirash Akilbekov Ainash Abdrakhmetova Gulnara Aralbayeva Zhanymgul Koishybayeva Jonibek Khamdamov Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track Template Crystals nanoheterostructure oxide semiconductors track template SiO<sub>2</sub>/Si δ-Ga<sub>2</sub>O<sub>3</sub> orthorhombic SnO<sub>2</sub> photoluminescence |
| title | Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track Template |
| title_full | Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track Template |
| title_fullStr | Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track Template |
| title_full_unstemmed | Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track Template |
| title_short | Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track Template |
| title_sort | synthesis and study of oxide semiconductor nanoheterostructures in sio sub 2 sub si track template |
| topic | nanoheterostructure oxide semiconductors track template SiO<sub>2</sub>/Si δ-Ga<sub>2</sub>O<sub>3</sub> orthorhombic SnO<sub>2</sub> photoluminescence |
| url | https://www.mdpi.com/2073-4352/14/12/1087 |
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