Delocalization of electron states in n-Si at low temperatures
We report on the electric transport properties of Si heavily doped with Sb in the temperature range of 1.9 - 3.0 K and at current density of J < 0.2 A/cm2. Based on the analysis of the current - voltage characteristics, the resistance values at different current densities are obtained. It was...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-05-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/2665 |
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