Dry etch performance of Novolak-based negative e-beam resist
Electron beam lithography (EBL) is pivotal for micro- and nanoscale fabrication, offering sub-micron precision. This study explores the utilization of the Novolac-based negative resist AR-N 7520 for EBL and its potential as an etch mask for reactive ion etching (RIE) of silicon. Recent comparisons o...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-12-01
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| Series: | Micro and Nano Engineering |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007224000479 |
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| author | Rahul Singh Christian Vinther Bertelsen Maria Dimaki Winnie Edith Svendsen |
| author_facet | Rahul Singh Christian Vinther Bertelsen Maria Dimaki Winnie Edith Svendsen |
| author_sort | Rahul Singh |
| collection | DOAJ |
| description | Electron beam lithography (EBL) is pivotal for micro- and nanoscale fabrication, offering sub-micron precision. This study explores the utilization of the Novolac-based negative resist AR-N 7520 for EBL and its potential as an etch mask for reactive ion etching (RIE) of silicon. Recent comparisons of negative EBL resists have revealed promising results for AR-N 7520 in terms of resolution and adaptability with other lithography techniques. In this article, we conduct an exploration of patterning of AR-N 7520 (new) for EBL, addressing key parameters in achieving optimal patterning fidelity. Furthermore, we investigate its compatibility with RIE processes, aiming to provide insights into its effectiveness as an etch mask for creating sub-micron silicon structures. Experimental results show that optimal e-beam dose with 100 kV exposure is 300–350 μC/cm2. Selectivity of around 9:1 can be achieved by optimizing etching parameters for a continuous etch and higher than 14:1 for a cyclic etch process. |
| format | Article |
| id | doaj-art-d0decfc496814a0f802c8284ad7abf59 |
| institution | OA Journals |
| issn | 2590-0072 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Micro and Nano Engineering |
| spelling | doaj-art-d0decfc496814a0f802c8284ad7abf592025-08-20T02:34:20ZengElsevierMicro and Nano Engineering2590-00722024-12-012510028410.1016/j.mne.2024.100284Dry etch performance of Novolak-based negative e-beam resistRahul Singh0Christian Vinther Bertelsen1Maria Dimaki2Winnie Edith Svendsen3DTU Bioengineering, Danmarks Tekniske Universitet (DTU), 2800 Kongens Lyngby, DenmarkDTU Bioengineering, Danmarks Tekniske Universitet (DTU), 2800 Kongens Lyngby, DenmarkDTU Bioengineering, Danmarks Tekniske Universitet (DTU), 2800 Kongens Lyngby, DenmarkCorresponding author.; DTU Bioengineering, Danmarks Tekniske Universitet (DTU), 2800 Kongens Lyngby, DenmarkElectron beam lithography (EBL) is pivotal for micro- and nanoscale fabrication, offering sub-micron precision. This study explores the utilization of the Novolac-based negative resist AR-N 7520 for EBL and its potential as an etch mask for reactive ion etching (RIE) of silicon. Recent comparisons of negative EBL resists have revealed promising results for AR-N 7520 in terms of resolution and adaptability with other lithography techniques. In this article, we conduct an exploration of patterning of AR-N 7520 (new) for EBL, addressing key parameters in achieving optimal patterning fidelity. Furthermore, we investigate its compatibility with RIE processes, aiming to provide insights into its effectiveness as an etch mask for creating sub-micron silicon structures. Experimental results show that optimal e-beam dose with 100 kV exposure is 300–350 μC/cm2. Selectivity of around 9:1 can be achieved by optimizing etching parameters for a continuous etch and higher than 14:1 for a cyclic etch process.http://www.sciencedirect.com/science/article/pii/S2590007224000479Reactive ion etchingElectron beam lithographyEtch mask selectivitySilicon patterning |
| spellingShingle | Rahul Singh Christian Vinther Bertelsen Maria Dimaki Winnie Edith Svendsen Dry etch performance of Novolak-based negative e-beam resist Micro and Nano Engineering Reactive ion etching Electron beam lithography Etch mask selectivity Silicon patterning |
| title | Dry etch performance of Novolak-based negative e-beam resist |
| title_full | Dry etch performance of Novolak-based negative e-beam resist |
| title_fullStr | Dry etch performance of Novolak-based negative e-beam resist |
| title_full_unstemmed | Dry etch performance of Novolak-based negative e-beam resist |
| title_short | Dry etch performance of Novolak-based negative e-beam resist |
| title_sort | dry etch performance of novolak based negative e beam resist |
| topic | Reactive ion etching Electron beam lithography Etch mask selectivity Silicon patterning |
| url | http://www.sciencedirect.com/science/article/pii/S2590007224000479 |
| work_keys_str_mv | AT rahulsingh dryetchperformanceofnovolakbasednegativeebeamresist AT christianvintherbertelsen dryetchperformanceofnovolakbasednegativeebeamresist AT mariadimaki dryetchperformanceofnovolakbasednegativeebeamresist AT winnieedithsvendsen dryetchperformanceofnovolakbasednegativeebeamresist |