Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications
Abstract With the surge in fifth-generation (5G) wireless systems and escalating growth of data traffic, the push for higher carrier frequencies with wider bandwidths intensifies. This work reveals the outstanding capabilities of wafer-level longitudinal leaky surface acoustic wave (LLSAW) devices o...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2025-08-01
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| Series: | Microsystems & Nanoengineering |
| Online Access: | https://doi.org/10.1038/s41378-025-01007-0 |
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| _version_ | 1849234650786955264 |
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| author | Peisen Liu Sulei Fu Boyuan Xiao Xinchen Zhou Qiufeng Xu Jiajun Gao Shuai Zhang Rui Wang Cheng Song Fei Zeng Weibiao Wang Feng Pan |
| author_facet | Peisen Liu Sulei Fu Boyuan Xiao Xinchen Zhou Qiufeng Xu Jiajun Gao Shuai Zhang Rui Wang Cheng Song Fei Zeng Weibiao Wang Feng Pan |
| author_sort | Peisen Liu |
| collection | DOAJ |
| description | Abstract With the surge in fifth-generation (5G) wireless systems and escalating growth of data traffic, the push for higher carrier frequencies with wider bandwidths intensifies. This work reveals the outstanding capabilities of wafer-level longitudinal leaky surface acoustic wave (LLSAW) devices on the lithium niobate on insulator (LNOI) platform in scaling SAW technology beyond 4 GHz by mass-produced lithography. Leveraging SiC-based LNOI, the fabricated LLSAW resonators showcase remarkable quality factor (Q), scalable electromechanical factor $$\left({k}_{\text{eff}}^{2}\right)$$ k eff 2 from 14% to 28%, and record high figure-of-merit (FoM) of 166 to 222 at 5–6 GHz. Targeted for diverse bands, LLSAW filters with adaptable bandwidths have been realized on specific LN-on-SiC platforms. The filters covering the n79 full band with a minimum insertion loss (IL min) of 0.85 dB and the 5 GHz Wi-Fi full band with an IL min of 1.62 dB, have been demonstrated for the first time. These findings position LLSAW on LN-on-SiC platform as a promising commercial-grade candidate for pushing the SAW paradigm towards high frequency and wideband filtering. |
| format | Article |
| id | doaj-art-d05140a29fb547afb8f3e2a267a25f0c |
| institution | Kabale University |
| issn | 2055-7434 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Microsystems & Nanoengineering |
| spelling | doaj-art-d05140a29fb547afb8f3e2a267a25f0c2025-08-20T04:03:03ZengNature Publishing GroupMicrosystems & Nanoengineering2055-74342025-08-011111910.1038/s41378-025-01007-0Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applicationsPeisen Liu0Sulei Fu1Boyuan Xiao2Xinchen Zhou3Qiufeng Xu4Jiajun Gao5Shuai Zhang6Rui Wang7Cheng Song8Fei Zeng9Weibiao Wang10Feng Pan11Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversitySHOULDER Electronics LimitedKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversityKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversitySHOULDER Electronics LimitedKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua UniversityAbstract With the surge in fifth-generation (5G) wireless systems and escalating growth of data traffic, the push for higher carrier frequencies with wider bandwidths intensifies. This work reveals the outstanding capabilities of wafer-level longitudinal leaky surface acoustic wave (LLSAW) devices on the lithium niobate on insulator (LNOI) platform in scaling SAW technology beyond 4 GHz by mass-produced lithography. Leveraging SiC-based LNOI, the fabricated LLSAW resonators showcase remarkable quality factor (Q), scalable electromechanical factor $$\left({k}_{\text{eff}}^{2}\right)$$ k eff 2 from 14% to 28%, and record high figure-of-merit (FoM) of 166 to 222 at 5–6 GHz. Targeted for diverse bands, LLSAW filters with adaptable bandwidths have been realized on specific LN-on-SiC platforms. The filters covering the n79 full band with a minimum insertion loss (IL min) of 0.85 dB and the 5 GHz Wi-Fi full band with an IL min of 1.62 dB, have been demonstrated for the first time. These findings position LLSAW on LN-on-SiC platform as a promising commercial-grade candidate for pushing the SAW paradigm towards high frequency and wideband filtering.https://doi.org/10.1038/s41378-025-01007-0 |
| spellingShingle | Peisen Liu Sulei Fu Boyuan Xiao Xinchen Zhou Qiufeng Xu Jiajun Gao Shuai Zhang Rui Wang Cheng Song Fei Zeng Weibiao Wang Feng Pan Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications Microsystems & Nanoengineering |
| title | Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications |
| title_full | Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications |
| title_fullStr | Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications |
| title_full_unstemmed | Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications |
| title_short | Scaling LLSAW filters on engineered LiNbO3-on-SiC wafer for 5G and Wi-Fi 6 wideband applications |
| title_sort | scaling llsaw filters on engineered linbo3 on sic wafer for 5g and wi fi 6 wideband applications |
| url | https://doi.org/10.1038/s41378-025-01007-0 |
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