Research on the Isolation Technology for Reverse Conducting IGCT
Isolation between GCT and FRD is the key technology in reverse conducting IGCT (RC_IGCT) developing. Compared with the existing isolation technology, a new method with compensated PNP isolation structure was proposed. Based on Silvaco simulation, process experiment and certification test were carrie...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.007 |
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| Summary: | Isolation between GCT and FRD is the key technology in reverse conducting IGCT (RC_IGCT) developing. Compared with the existing isolation technology, a new method with compensated PNP isolation structure was proposed. Based on Silvaco simulation, process experiment and certification test were carried out on RC_GCTs wafers with 4 "and 6" substrates. The results show that the new method can increase the isolation voltage and reduce the difficulties both in the design and process. |
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| ISSN: | 2096-5427 |