A capacitance-coupled Ga2O3 memristor
Memristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memr...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-04-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0260023 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850205243885748224 |
|---|---|
| author | Alfred Moore Lijie Li Hang Shao Xiaoyan Tang Huili Liang Zengxia Mei Yaonan Hou |
| author_facet | Alfred Moore Lijie Li Hang Shao Xiaoyan Tang Huili Liang Zengxia Mei Yaonan Hou |
| author_sort | Alfred Moore |
| collection | DOAJ |
| description | Memristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memristor exhibits a clear current switching with different polarities, offering an easy-to-readout electronic status. Due to the coupled capacitance, the difference between the currents in forward and reverse scanning strongly depends on the voltage sweeping speed, which was quantitatively studied with an equivalent circuit that we established. A device model based on filamentary conductive paths formed by the electrically driven oxygen vacancies was utilized to explain the working mechanism of the C-memristor, which aligns well with the observed results. Unlike previously reported Ga2O3 memristors that rely only on the status of the resistance, our device also exhibits capacitance variation, offering an additional degree of freedom (e.g., the power nodes) for constructing a neural network. |
| format | Article |
| id | doaj-art-d03106f11c714686b3a4d2ed461a4e9e |
| institution | OA Journals |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-d03106f11c714686b3a4d2ed461a4e9e2025-08-20T02:11:08ZengAIP Publishing LLCAIP Advances2158-32262025-04-01154045309045309-510.1063/5.0260023A capacitance-coupled Ga2O3 memristorAlfred Moore0Lijie Li1Hang Shao2Xiaoyan Tang3Huili Liang4Zengxia Mei5Yaonan Hou6Electronic and Electrical Engineering, Swansea University, Bay Campus, SA1 8EN Swansea, United KingdomElectronic and Electrical Engineering, Swansea University, Bay Campus, SA1 8EN Swansea, United KingdomSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaElectronic and Electrical Engineering, Swansea University, Bay Campus, SA1 8EN Swansea, United KingdomMemristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memristor exhibits a clear current switching with different polarities, offering an easy-to-readout electronic status. Due to the coupled capacitance, the difference between the currents in forward and reverse scanning strongly depends on the voltage sweeping speed, which was quantitatively studied with an equivalent circuit that we established. A device model based on filamentary conductive paths formed by the electrically driven oxygen vacancies was utilized to explain the working mechanism of the C-memristor, which aligns well with the observed results. Unlike previously reported Ga2O3 memristors that rely only on the status of the resistance, our device also exhibits capacitance variation, offering an additional degree of freedom (e.g., the power nodes) for constructing a neural network.http://dx.doi.org/10.1063/5.0260023 |
| spellingShingle | Alfred Moore Lijie Li Hang Shao Xiaoyan Tang Huili Liang Zengxia Mei Yaonan Hou A capacitance-coupled Ga2O3 memristor AIP Advances |
| title | A capacitance-coupled Ga2O3 memristor |
| title_full | A capacitance-coupled Ga2O3 memristor |
| title_fullStr | A capacitance-coupled Ga2O3 memristor |
| title_full_unstemmed | A capacitance-coupled Ga2O3 memristor |
| title_short | A capacitance-coupled Ga2O3 memristor |
| title_sort | capacitance coupled ga2o3 memristor |
| url | http://dx.doi.org/10.1063/5.0260023 |
| work_keys_str_mv | AT alfredmoore acapacitancecoupledga2o3memristor AT lijieli acapacitancecoupledga2o3memristor AT hangshao acapacitancecoupledga2o3memristor AT xiaoyantang acapacitancecoupledga2o3memristor AT huililiang acapacitancecoupledga2o3memristor AT zengxiamei acapacitancecoupledga2o3memristor AT yaonanhou acapacitancecoupledga2o3memristor AT alfredmoore capacitancecoupledga2o3memristor AT lijieli capacitancecoupledga2o3memristor AT hangshao capacitancecoupledga2o3memristor AT xiaoyantang capacitancecoupledga2o3memristor AT huililiang capacitancecoupledga2o3memristor AT zengxiamei capacitancecoupledga2o3memristor AT yaonanhou capacitancecoupledga2o3memristor |