THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY
The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-pr...
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| Main Authors: | D. HA. Dao, V. S. Volchek, M. S. Baranava, I. Yu. Lovshenko, D. C. Hvazdouski, V. R. Stempitsky |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/752 |
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