Self-Heating-Based channel thermal noise of advanced Sub-5-nm-Node nanosheet FET
In this paper, the self-heating effect and channel thermal noise (Sid) in stacked nanosheet gate-all-around (GAA) field effect transistor (FET) are investigated and discussed. In order to calculate channel thermal noise in radio-frequency (RF) operation, various factors such as electron mobility, te...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379724007447 |
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