Effect of the Number of Phenylcarbazole Units Adorned to the Silicon Atom for High Triplet Energy with High Charge Mobility

Effect of the Number of Phenylcarbazole Units Adorned to the Silicon Atom for High Triplet Energy with High Charge Mobility

Increasing the number of phenylcarbazole (PC) units attached to the silicon atom in organic solid-state thin films led to a remarkable enhancement in charge mobility. Specifically, the charge mobility values exhibited an increase from 1.32 × 10<sup>−4</sup> cm<sup>2</sup>/Vs...

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Bibliographic Details
Main Authors: Mina Ahn, Sunhee Lee, Min-Ji Kim, Jeongyoon Kim, Jina Lee, Heejun Nam, Kyung-Ryang Wee, Won-Sik Han
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Molecules
Subjects:
charge transporting material
high hole mobility
high triplet energy
Online Access:https://www.mdpi.com/1420-3049/30/3/454
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