Some Investigations on the Anisotropy of the Chemical Etching of (hk0) and (hhl) Silicon Plates in a NaOH 35% Solution. Part I: 2D Etching Shapes
In this paper a study of the anisotropic dissolution of (hk0) and (hhl) silicon plates in a NaOH 35% solution is undertaken. Effects of orientation on firstly, the geometrical features of etched surfaces and secondly, on the cross-sectional shape of starting circular plates are systematically invest...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/80453 |
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| Summary: | In this paper a study of the anisotropic dissolution of (hk0) and (hhl) silicon plates in
a NaOH 35% solution is undertaken. Effects of orientation on firstly, the geometrical
features of etched surfaces and secondly, on the cross-sectional shape of starting circular
plates are systematically investigated. Conclusions of practical interest on the roughness
of etched (hk0) and (hhl) planes are drawn. 2D etching shapes are then analysed in terms
of the tensorial model for the anisotropic dissolution and of dissolution criteria. Finally
a comparative analysis of results related on the one hand, to 2D surface profiles and
on the other, to out-of-roundness profiles is made. This comparison shows that shapes
observed for profilometry traces agree with theoretical shapes as derived when we use
the resemblance in shapes between out-of-roundness profiles and polar diagrams of the
dissolution slowness. |
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| ISSN: | 0882-7516 1563-5031 |