Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor
Abstract Two-dimensional (2D) monolayers have gained significant attention as ultrathin active layers for fabricating atomic-scale memristor (atomristor) structures due to their crystalline structures and clean surfaces. This study reports on the giant memory window performance and low power consump...
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| Format: | Article |
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Nature Portfolio
2025-02-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00533-9 |
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| author | Sung Jin Yang Yu-Rim Jeon Dongyoon Kim Sivasakthya Mohan Shanmukh Kutagulla Matthew Disiena Sanjay K. Banerjee Deji Akinwande |
| author_facet | Sung Jin Yang Yu-Rim Jeon Dongyoon Kim Sivasakthya Mohan Shanmukh Kutagulla Matthew Disiena Sanjay K. Banerjee Deji Akinwande |
| author_sort | Sung Jin Yang |
| collection | DOAJ |
| description | Abstract Two-dimensional (2D) monolayers have gained significant attention as ultrathin active layers for fabricating atomic-scale memristor (atomristor) structures due to their crystalline structures and clean surfaces. This study reports on the giant memory window performance and low power consumption of the atomristor structures using a hexagonal boron nitride (h-BN) monolayer and symmetric silver (Ag) metal electrodes through a polypropylene carbonate (PPC) assisted transfer method. The h-BN atomristor exhibits the highest memory window (~4 × 109), the lowest leakage current (~0.24 pA), and the lowest power consumption (~3 × 10−14 W) compared to the other 2D atomristors. Furthermore, the h-BN atomristor achieves significant endurances and yields of up to 10,000 switching cycles and 77%, respectively, due to the superior thermomechanical properties of the PPC support layer for transferring ultrathin and large-area h-BN monolayers. These results represent a significant step toward the realization of high-performance and energy-efficient neuromorphic computing circuits based on 2D monolayers. |
| format | Article |
| id | doaj-art-cf77ace16262485ebf51e96403e46ba7 |
| institution | Kabale University |
| issn | 2397-7132 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-cf77ace16262485ebf51e96403e46ba72025-02-09T12:39:28ZengNature Portfolionpj 2D Materials and Applications2397-71322025-02-01911910.1038/s41699-025-00533-9Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristorSung Jin Yang0Yu-Rim Jeon1Dongyoon Kim2Sivasakthya Mohan3Shanmukh Kutagulla4Matthew Disiena5Sanjay K. Banerjee6Deji Akinwande7Microelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinMaterials Science and Engineering and Texas Materials Institute, The University of Texas at AustinMaterials Science and Engineering and Texas Materials Institute, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinAbstract Two-dimensional (2D) monolayers have gained significant attention as ultrathin active layers for fabricating atomic-scale memristor (atomristor) structures due to their crystalline structures and clean surfaces. This study reports on the giant memory window performance and low power consumption of the atomristor structures using a hexagonal boron nitride (h-BN) monolayer and symmetric silver (Ag) metal electrodes through a polypropylene carbonate (PPC) assisted transfer method. The h-BN atomristor exhibits the highest memory window (~4 × 109), the lowest leakage current (~0.24 pA), and the lowest power consumption (~3 × 10−14 W) compared to the other 2D atomristors. Furthermore, the h-BN atomristor achieves significant endurances and yields of up to 10,000 switching cycles and 77%, respectively, due to the superior thermomechanical properties of the PPC support layer for transferring ultrathin and large-area h-BN monolayers. These results represent a significant step toward the realization of high-performance and energy-efficient neuromorphic computing circuits based on 2D monolayers.https://doi.org/10.1038/s41699-025-00533-9 |
| spellingShingle | Sung Jin Yang Yu-Rim Jeon Dongyoon Kim Sivasakthya Mohan Shanmukh Kutagulla Matthew Disiena Sanjay K. Banerjee Deji Akinwande Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor npj 2D Materials and Applications |
| title | Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor |
| title_full | Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor |
| title_fullStr | Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor |
| title_full_unstemmed | Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor |
| title_short | Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor |
| title_sort | giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor |
| url | https://doi.org/10.1038/s41699-025-00533-9 |
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