Exciton Self-Trapping in Twisted Hexagonal Boron Nitride homostructures
One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminesc...
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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American Physical Society
2025-05-01
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| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.15.021067 |
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| author | Sébastien Roux Christophe Arnold Etienne Carré Alexandre Plaud Lei Ren Frédéric Fossard Nicolas Horezan Eli Janzen James H. Edgar Camille Maestre Bérangère Toury Catherine Journet Vincent Garnier Philippe Steyer Takashi Taniguchi Kenji Watanabe Cédric Robert Xavier Marie François Ducastelle Annick Loiseau Julien Barjon |
| author_facet | Sébastien Roux Christophe Arnold Etienne Carré Alexandre Plaud Lei Ren Frédéric Fossard Nicolas Horezan Eli Janzen James H. Edgar Camille Maestre Bérangère Toury Catherine Journet Vincent Garnier Philippe Steyer Takashi Taniguchi Kenji Watanabe Cédric Robert Xavier Marie François Ducastelle Annick Loiseau Julien Barjon |
| author_sort | Sébastien Roux |
| collection | DOAJ |
| description | One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (h-BN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature-dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a self-trapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted h-BN–h-BN structures. Exciton self-trapping is finally discussed as a common feature of sp^{2} hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B—N bond and the small size of their excitons. |
| format | Article |
| id | doaj-art-cf15745e163b484ebc2747965cfd0ae5 |
| institution | OA Journals |
| issn | 2160-3308 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review X |
| spelling | doaj-art-cf15745e163b484ebc2747965cfd0ae52025-08-20T02:30:14ZengAmerican Physical SocietyPhysical Review X2160-33082025-05-0115202106710.1103/PhysRevX.15.021067Exciton Self-Trapping in Twisted Hexagonal Boron Nitride homostructuresSébastien RouxChristophe ArnoldEtienne CarréAlexandre PlaudLei RenFrédéric FossardNicolas HorezanEli JanzenJames H. EdgarCamille MaestreBérangère TouryCatherine JournetVincent GarnierPhilippe SteyerTakashi TaniguchiKenji WatanabeCédric RobertXavier MarieFrançois DucastelleAnnick LoiseauJulien BarjonOne of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (h-BN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature-dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a self-trapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted h-BN–h-BN structures. Exciton self-trapping is finally discussed as a common feature of sp^{2} hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B—N bond and the small size of their excitons.http://doi.org/10.1103/PhysRevX.15.021067 |
| spellingShingle | Sébastien Roux Christophe Arnold Etienne Carré Alexandre Plaud Lei Ren Frédéric Fossard Nicolas Horezan Eli Janzen James H. Edgar Camille Maestre Bérangère Toury Catherine Journet Vincent Garnier Philippe Steyer Takashi Taniguchi Kenji Watanabe Cédric Robert Xavier Marie François Ducastelle Annick Loiseau Julien Barjon Exciton Self-Trapping in Twisted Hexagonal Boron Nitride homostructures Physical Review X |
| title | Exciton Self-Trapping in Twisted Hexagonal Boron Nitride homostructures |
| title_full | Exciton Self-Trapping in Twisted Hexagonal Boron Nitride homostructures |
| title_fullStr | Exciton Self-Trapping in Twisted Hexagonal Boron Nitride homostructures |
| title_full_unstemmed | Exciton Self-Trapping in Twisted Hexagonal Boron Nitride homostructures |
| title_short | Exciton Self-Trapping in Twisted Hexagonal Boron Nitride homostructures |
| title_sort | exciton self trapping in twisted hexagonal boron nitride homostructures |
| url | http://doi.org/10.1103/PhysRevX.15.021067 |
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