Enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure
This study introduces an enhanced high electron mobility transistor with a lattice-matched AlInGaN/GaN heterojunction and a composite gate structure (CGS). The CGS comprises a recessed gate and a P-type cap layer gate. The P-type cap layer has a limited ability to increase the threshold voltage of t...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0253119 |
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