Synaptic behaviour in ZnO–rGO composites thin film memristor
A zinc oxide (ZnO)–reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike‐timing‐dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circu...
Saved in:
Main Authors: | G.M. Khanal, S. Acciarito, G.C. Cardarilli, A. Chakraborty, L.D. Nunzio, R. Fazzolari, A. Cristini, M. Re, G. Susi |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2017-03-01
|
Series: | Electronics Letters |
Subjects: | |
Online Access: | https://doi.org/10.1049/el.2016.3655 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Spin‐coating fabrication of high‐yield and uniform organic thin‐film transistors via a primer template growth
by: Zhenxin Yang, et al.
Published: (2025-01-01) -
Impact of Mn/Co substitution on magnetoelectric and structural properties of ZnO nanostructures thin films
by: Ángela P. Lanchero, et al.
Published: (2025-02-01) -
Vanadium Oxide Based Electrochromic Energy Storage Devices via Facile Thin Film Preparation
by: Asuman Tuna, et al.
Published: (2023-06-01) -
Probe device for electrical measurements of parameters thin doped films ZnO
by: A. I. Blesman, et al.
Published: (2020-03-01) -
Electroluminescent Display with Picture Storage
by: Z. Porada, et al.
Published: (1998-01-01)