Tb<sup>3+</sup>-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features

Piezoelectric materials have garnered significant attention due to their diverse applications in technologies such as sensors, actuators, and energy-harvesting systems. This study focuses on the growth and characterization of Tb<sup>3+</sup>-doped La<sub>3</sub>Ga<sub>5...

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Main Authors: Nianlong Zhang, Jipeng Wu, Hengyuan Zhang, Feifei Chen, Fapeng Yu, Li Sun, Xian Zhao
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Crystals
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Online Access:https://www.mdpi.com/2073-4352/15/3/269
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author Nianlong Zhang
Jipeng Wu
Hengyuan Zhang
Feifei Chen
Fapeng Yu
Li Sun
Xian Zhao
author_facet Nianlong Zhang
Jipeng Wu
Hengyuan Zhang
Feifei Chen
Fapeng Yu
Li Sun
Xian Zhao
author_sort Nianlong Zhang
collection DOAJ
description Piezoelectric materials have garnered significant attention due to their diverse applications in technologies such as sensors, actuators, and energy-harvesting systems. This study focuses on the growth and characterization of Tb<sup>3+</sup>-doped La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub> (LGS) crystals. A novel 10% Tb<sup>3+</sup>-doped single LGS crystal was successfully grown using the Czochralski method. The crystal structure and fluorescence properties were determined, and the electro-elastic properties were evaluated by the impedance method, which assessed dielectric, piezoelectric, and elastic constants. The Tb<sup>3+</sup>-doped crystal was observed to crystallize in the trigonal system, with the concentration of the Tb<sup>3+</sup> ion in the crystal determined to be 2.50 wt%. The piezoelectric coefficients were measured as d<sub>11</sub> = 5.41 pC/N and d<sub>14</sub> = −5.52 pC/N, and the dielectric constants were found to be 19.60 and 52.75, respectively. The temperature-dependent behavior of Tb:LGS crystals was investigated, particularly concerning their elastic constants, demonstrating favorable thermal stability. This study provides valuable insights into the relationship between the crystals’ structural characteristics and performance. Additionally, the fluorescence properties were measured; a long lifetime (τ = 1.655 ms) indicated the potential applications of Tb:LGS crystals in laser technology.
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spelling doaj-art-ce5c1572dc6c4aacbe98d6c431aa7e2e2025-08-20T02:11:01ZengMDPI AGCrystals2073-43522025-03-0115326910.3390/cryst15030269Tb<sup>3+</sup>-Doped LGS Crystals: Crystal Growth and Electro-Elastic FeaturesNianlong Zhang0Jipeng Wu1Hengyuan Zhang2Feifei Chen3Fapeng Yu4Li Sun5Xian Zhao6Center for Optics Research and Engineering, Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, ChinaCenter for Optics Research and Engineering, Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, ChinaCenter for Optics Research and Engineering, Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, ChinaCenter for Optics Research and Engineering, Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, ChinaState Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaCenter for Optics Research and Engineering, Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, ChinaPiezoelectric materials have garnered significant attention due to their diverse applications in technologies such as sensors, actuators, and energy-harvesting systems. This study focuses on the growth and characterization of Tb<sup>3+</sup>-doped La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub> (LGS) crystals. A novel 10% Tb<sup>3+</sup>-doped single LGS crystal was successfully grown using the Czochralski method. The crystal structure and fluorescence properties were determined, and the electro-elastic properties were evaluated by the impedance method, which assessed dielectric, piezoelectric, and elastic constants. The Tb<sup>3+</sup>-doped crystal was observed to crystallize in the trigonal system, with the concentration of the Tb<sup>3+</sup> ion in the crystal determined to be 2.50 wt%. The piezoelectric coefficients were measured as d<sub>11</sub> = 5.41 pC/N and d<sub>14</sub> = −5.52 pC/N, and the dielectric constants were found to be 19.60 and 52.75, respectively. The temperature-dependent behavior of Tb:LGS crystals was investigated, particularly concerning their elastic constants, demonstrating favorable thermal stability. This study provides valuable insights into the relationship between the crystals’ structural characteristics and performance. Additionally, the fluorescence properties were measured; a long lifetime (τ = 1.655 ms) indicated the potential applications of Tb:LGS crystals in laser technology.https://www.mdpi.com/2073-4352/15/3/269Tb dopingsingle LGS crystalcrystal growthelectro-elastic propertytemperature stability
spellingShingle Nianlong Zhang
Jipeng Wu
Hengyuan Zhang
Feifei Chen
Fapeng Yu
Li Sun
Xian Zhao
Tb<sup>3+</sup>-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features
Crystals
Tb doping
single LGS crystal
crystal growth
electro-elastic property
temperature stability
title Tb<sup>3+</sup>-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features
title_full Tb<sup>3+</sup>-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features
title_fullStr Tb<sup>3+</sup>-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features
title_full_unstemmed Tb<sup>3+</sup>-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features
title_short Tb<sup>3+</sup>-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features
title_sort tb sup 3 sup doped lgs crystals crystal growth and electro elastic features
topic Tb doping
single LGS crystal
crystal growth
electro-elastic property
temperature stability
url https://www.mdpi.com/2073-4352/15/3/269
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AT feifeichen tbsup3supdopedlgscrystalscrystalgrowthandelectroelasticfeatures
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