Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell
Incorporated foreign atoms into the quantum dots (QDs) used in heterojunction have always been a challenge for solar energy conversion. A foreign atom indium atom was incorporated into PbS/CdS QDs to prepare In-PbS/In-CdS heterojunction by successive ionic layer adsorption and reaction method which...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/179289 |
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| author | Yanyan Gao Xiaoping Zou Zongbo Huang |
| author_facet | Yanyan Gao Xiaoping Zou Zongbo Huang |
| author_sort | Yanyan Gao |
| collection | DOAJ |
| description | Incorporated foreign atoms into the quantum dots (QDs) used in heterojunction have always been a challenge for solar energy conversion. A foreign atom indium atom was incorporated into PbS/CdS QDs to prepare In-PbS/In-CdS heterojunction by successive ionic layer adsorption and reaction method which is a chemical method. Experimental results indicate that PbS or CdS has been doped with In by SILAR method; the concentration of PbS and CdS which was doped In atoms has no significantly increase or decrease. In addition, incorporating of Indium atoms has resulted in the lattice distortions or changes of PbS or CdS and improved the light harvest of heterojunction. Using this heterojunction, Pt counter electrode and polysulfide electrolyte, to fabricate quantum dot sensitized solar cells, the short circuit current density ballooned to 27.01 mA/cm2 from 13.61 mA/cm2 and the open circuit voltage was improved to 0.43 V from 0.37 V at the same time. |
| format | Article |
| id | doaj-art-ce04f6c664ab43e9935477e2edf8812e |
| institution | DOAJ |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-ce04f6c664ab43e9935477e2edf8812e2025-08-20T03:19:41ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/179289179289Doped Heterojunction Used in Quantum Dot Sensitized Solar CellYanyan Gao0Xiaoping Zou1Zongbo Huang2Beijing Key Laboratory for Sensor, School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, ChinaBeijing Key Laboratory for Sensor, School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, ChinaBeijing Key Laboratory for Sensor, School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, ChinaIncorporated foreign atoms into the quantum dots (QDs) used in heterojunction have always been a challenge for solar energy conversion. A foreign atom indium atom was incorporated into PbS/CdS QDs to prepare In-PbS/In-CdS heterojunction by successive ionic layer adsorption and reaction method which is a chemical method. Experimental results indicate that PbS or CdS has been doped with In by SILAR method; the concentration of PbS and CdS which was doped In atoms has no significantly increase or decrease. In addition, incorporating of Indium atoms has resulted in the lattice distortions or changes of PbS or CdS and improved the light harvest of heterojunction. Using this heterojunction, Pt counter electrode and polysulfide electrolyte, to fabricate quantum dot sensitized solar cells, the short circuit current density ballooned to 27.01 mA/cm2 from 13.61 mA/cm2 and the open circuit voltage was improved to 0.43 V from 0.37 V at the same time.http://dx.doi.org/10.1155/2014/179289 |
| spellingShingle | Yanyan Gao Xiaoping Zou Zongbo Huang Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell International Journal of Photoenergy |
| title | Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell |
| title_full | Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell |
| title_fullStr | Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell |
| title_full_unstemmed | Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell |
| title_short | Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell |
| title_sort | doped heterojunction used in quantum dot sensitized solar cell |
| url | http://dx.doi.org/10.1155/2014/179289 |
| work_keys_str_mv | AT yanyangao dopedheterojunctionusedinquantumdotsensitizedsolarcell AT xiaopingzou dopedheterojunctionusedinquantumdotsensitizedsolarcell AT zongbohuang dopedheterojunctionusedinquantumdotsensitizedsolarcell |