Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disul...

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Bibliographic Details
Main Authors: Sofía Cruces, Mohit Dineshkumar Ganeriwala, Jimin Lee, Lukas Völkel, Dennis Braun, Annika Grundmann, Ke Ran, Enrique González Marín, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Andrés Godoy, Alwin Daus, Max Christian Lemme
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Small Science
Subjects:
2D materials
compact model
ion migration
lateral memristor
neuromorphic computing
resistive switching
Online Access:https://doi.org/10.1002/smsc.202400523
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