Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disul...
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Wiley-VCH
2025-05-01
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| Series: | Small Science |
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| Online Access: | https://doi.org/10.1002/smsc.202400523 |
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| author | Sofía Cruces Mohit Dineshkumar Ganeriwala Jimin Lee Lukas Völkel Dennis Braun Annika Grundmann Ke Ran Enrique González Marín Holger Kalisch Michael Heuken Andrei Vescan Joachim Mayer Andrés Godoy Alwin Daus Max Christian Lemme |
| author_facet | Sofía Cruces Mohit Dineshkumar Ganeriwala Jimin Lee Lukas Völkel Dennis Braun Annika Grundmann Ke Ran Enrique González Marín Holger Kalisch Michael Heuken Andrei Vescan Joachim Mayer Andrés Godoy Alwin Daus Max Christian Lemme |
| author_sort | Sofía Cruces |
| collection | DOAJ |
| description | Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS2)‐based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single‐crystal MoS2 flakes requiring a forming step to enable RS. Herein, present volatile RS with multilayer MoS2 grown by metal‐organic chemical vapor deposition (MOCVD) with repeatable forming‐free operation is presented. The devices show highly reproducible volatile RS with low operating voltages of ≈2 V and fast‐switching times down to 130 ns considering their micrometer‐scale dimensions. The switching mechanism is investigated based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, a physics‐based compact model is developed and the implementation of the volatile memristors as artificial neurons in neuromorphic systems is exploredd. |
| format | Article |
| id | doaj-art-ce02e0d38b44482496da33aab256ffab |
| institution | OA Journals |
| issn | 2688-4046 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Science |
| spelling | doaj-art-ce02e0d38b44482496da33aab256ffab2025-08-20T02:10:52ZengWiley-VCHSmall Science2688-40462025-05-0155n/an/a10.1002/smsc.202400523Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron ApplicationsSofía Cruces0Mohit Dineshkumar Ganeriwala1Jimin Lee2Lukas Völkel3Dennis Braun4Annika Grundmann5Ke Ran6Enrique González Marín7Holger Kalisch8Michael Heuken9Andrei Vescan10Joachim Mayer11Andrés Godoy12Alwin Daus13Max Christian Lemme14Chair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Str. 25 52074 Aachen GermanyDepartment of Electronics and Computer Science Universidad de Granada Avenida de la Fuente Nueva S/N 18071 Granada SpainChair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Str. 25 52074 Aachen GermanyChair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Str. 25 52074 Aachen GermanyChair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Str. 25 52074 Aachen GermanyCompound Semiconductor Technology RWTH Aachen University Sommerfeldstr. 18 52074 Aachen GermanyCentral Facility for Electron Microscopy RWTH Aachen University Ahornstr. 55 52074 Aachen GermanyDepartment of Electronics and Computer Science Universidad de Granada Avenida de la Fuente Nueva S/N 18071 Granada SpainCompound Semiconductor Technology RWTH Aachen University Sommerfeldstr. 18 52074 Aachen GermanyCompound Semiconductor Technology RWTH Aachen University Sommerfeldstr. 18 52074 Aachen GermanyCompound Semiconductor Technology RWTH Aachen University Sommerfeldstr. 18 52074 Aachen GermanyCentral Facility for Electron Microscopy RWTH Aachen University Ahornstr. 55 52074 Aachen GermanyDepartment of Electronics and Computer Science Universidad de Granada Avenida de la Fuente Nueva S/N 18071 Granada SpainChair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Str. 25 52074 Aachen GermanyChair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Str. 25 52074 Aachen GermanyLayered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS2)‐based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single‐crystal MoS2 flakes requiring a forming step to enable RS. Herein, present volatile RS with multilayer MoS2 grown by metal‐organic chemical vapor deposition (MOCVD) with repeatable forming‐free operation is presented. The devices show highly reproducible volatile RS with low operating voltages of ≈2 V and fast‐switching times down to 130 ns considering their micrometer‐scale dimensions. The switching mechanism is investigated based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, a physics‐based compact model is developed and the implementation of the volatile memristors as artificial neurons in neuromorphic systems is exploredd.https://doi.org/10.1002/smsc.2024005232D materialscompact modelion migrationlateral memristorneuromorphic computingresistive switching |
| spellingShingle | Sofía Cruces Mohit Dineshkumar Ganeriwala Jimin Lee Lukas Völkel Dennis Braun Annika Grundmann Ke Ran Enrique González Marín Holger Kalisch Michael Heuken Andrei Vescan Joachim Mayer Andrés Godoy Alwin Daus Max Christian Lemme Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications Small Science 2D materials compact model ion migration lateral memristor neuromorphic computing resistive switching |
| title | Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications |
| title_full | Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications |
| title_fullStr | Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications |
| title_full_unstemmed | Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications |
| title_short | Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications |
| title_sort | volatile mos2 memristors with lateral silver ion migration for artificial neuron applications |
| topic | 2D materials compact model ion migration lateral memristor neuromorphic computing resistive switching |
| url | https://doi.org/10.1002/smsc.202400523 |
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