Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator
We present design of plasmonic modulators using vanadium dioxide (VO<sub>2</sub>) as modulating material realized on silicon-on-insulator (SOI) wafer with only 200 nm × 140 nm modulating section within 1 <italic>μ </italic>m &#x...
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7891538/ |
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| author | Miao Sun William Shieh Ranjith R. Unnithan |
| author_facet | Miao Sun William Shieh Ranjith R. Unnithan |
| author_sort | Miao Sun |
| collection | DOAJ |
| description | We present design of plasmonic modulators using vanadium dioxide (VO<sub>2</sub>) as modulating material realized on silicon-on-insulator (SOI) wafer with only 200 nm × 140 nm modulating section within 1 <italic>μ </italic>m × 3 <italic>μ</italic>m device footprint. By utilising the large refractive index contrast between the metallic and semiconductor phases of VO<sub>2</sub>, the modulator can achieve a broad working wavelength range from 1100 to 1800 nm around C-band, with a high modulation depth of 21.5 dB/<italic>μ</italic>m. We also analyse effects of using seed layer of different dielectric materials for growing VO<sub>2</sub> on modulation index by exploring the mixed combination of VO<sub>2</sub> and different dielectric materials. Our device geometries can have potential applications in the development of next-generation miniaturised high-frequency optical modulators in silicon photonics for optical communications. |
| format | Article |
| id | doaj-art-cdbb21767f474be9abcdaac026c7b413 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-cdbb21767f474be9abcdaac026c7b4132025-08-20T03:31:20ZengIEEEIEEE Photonics Journal1943-06552017-01-019311010.1109/JPHOT.2017.26904487891538Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-InsulatorMiao Sun0William Shieh1Ranjith R. Unnithan2Department of Electrical and Electronic Engineering, The University of Melbourne, Melbourne, Vic., AustraliaDepartment of Electrical and Electronic Engineering, The University of Melbourne, Melbourne, Vic., AustraliaDepartment of Electrical and Electronic Engineering, The University of Melbourne, Melbourne, Vic., AustraliaWe present design of plasmonic modulators using vanadium dioxide (VO<sub>2</sub>) as modulating material realized on silicon-on-insulator (SOI) wafer with only 200 nm × 140 nm modulating section within 1 <italic>μ </italic>m × 3 <italic>μ</italic>m device footprint. By utilising the large refractive index contrast between the metallic and semiconductor phases of VO<sub>2</sub>, the modulator can achieve a broad working wavelength range from 1100 to 1800 nm around C-band, with a high modulation depth of 21.5 dB/<italic>μ</italic>m. We also analyse effects of using seed layer of different dielectric materials for growing VO<sub>2</sub> on modulation index by exploring the mixed combination of VO<sub>2</sub> and different dielectric materials. Our device geometries can have potential applications in the development of next-generation miniaturised high-frequency optical modulators in silicon photonics for optical communications.https://ieeexplore.ieee.org/document/7891538/Plasmonicsnanophotonicssubwavelength structuresoptoelectronic materials |
| spellingShingle | Miao Sun William Shieh Ranjith R. Unnithan Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator IEEE Photonics Journal Plasmonics nanophotonics subwavelength structures optoelectronic materials |
| title | Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator |
| title_full | Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator |
| title_fullStr | Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator |
| title_full_unstemmed | Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator |
| title_short | Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator |
| title_sort | design of plasmonic modulators with vanadium dioxide on silicon on insulator |
| topic | Plasmonics nanophotonics subwavelength structures optoelectronic materials |
| url | https://ieeexplore.ieee.org/document/7891538/ |
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