Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator

Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator

We present design of plasmonic modulators using vanadium dioxide (VO<sub>2</sub>) as modulating material realized on silicon-on-insulator (SOI) wafer with only 200&#x00A0;nm &#x00D7; 140&#x00A0;nm modulating section within 1 <italic>&#x03BC; </italic>m &#x...

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Bibliographic Details
Main Authors: Miao Sun, William Shieh, Ranjith R. Unnithan
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Plasmonics
nanophotonics
subwavelength structures
optoelectronic materials
Online Access:https://ieeexplore.ieee.org/document/7891538/
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Summary:We present design of plasmonic modulators using vanadium dioxide (VO<sub>2</sub>) as modulating material realized on silicon-on-insulator (SOI) wafer with only 200&#x00A0;nm &#x00D7; 140&#x00A0;nm modulating section within 1 <italic>&#x03BC; </italic>m &#x00D7; 3 <italic>&#x03BC;</italic>m device footprint. By utilising the large refractive index contrast between the metallic and semiconductor phases of VO<sub>2</sub>, the modulator can achieve a broad working wavelength range from 1100 to 1800 nm around C-band, with a high modulation depth of 21.5 dB&#x002F;<italic>&#x03BC;</italic>m. We also analyse effects of using seed layer of different dielectric materials for growing VO<sub>2</sub> on modulation index by exploring the mixed combination of VO<sub>2</sub> and different dielectric materials. Our device geometries can have potential applications in the development of next-generation miniaturised high-frequency optical modulators in silicon photonics for optical communications.
ISSN:1943-0655

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