Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments
Abstract In many industries, there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations. Utilizing the piezoresistive effect of heavily doped N-type 4H-SiC, we proposed a family design of eight...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2025-04-01
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| Series: | Microsystems & Nanoengineering |
| Online Access: | https://doi.org/10.1038/s41378-025-00929-z |
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