Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments
Abstract In many industries, there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations. Utilizing the piezoresistive effect of heavily doped N-type 4H-SiC, we proposed a family design of eight...
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2025-04-01
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| Series: | Microsystems & Nanoengineering |
| Online Access: | https://doi.org/10.1038/s41378-025-00929-z |
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| author | Lukang Wang Nuo Wan Yu Yang Yabing Wang You Zhao Jiaoyang Zhu Minye Yang Yi Lyu Ming Liu Yulong Zhao |
| author_facet | Lukang Wang Nuo Wan Yu Yang Yabing Wang You Zhao Jiaoyang Zhu Minye Yang Yi Lyu Ming Liu Yulong Zhao |
| author_sort | Lukang Wang |
| collection | DOAJ |
| description | Abstract In many industries, there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations. Utilizing the piezoresistive effect of heavily doped N-type 4H-SiC, we proposed a family design of eight pressure sensor chip structures featuring different diaphragm shapes of circles and squares, along with different piezoresistor configurations. The 4H-SiC piezoresistive pressure sensor was developed using micro-electromechanical systems (MEMS) technology and encapsulated in a leadless package structure via low-stress connection achieved by glass frit sintering. The 4H-SiC pressure sensor demonstrates impressive performance, exhibiting an accuracy of 0.18% FSO and a temperature tolerance range from −50 to 600 °C, with a temperature coefficient of zero output as low as 0.08%/°C at 600 °C. Furthermore, the developed sensor shows remarkable stability under conditions of high-temperature vibration coupling. The advancement of this family of 4H-SiC pressure sensors provides a promising solution for pressure measurement in harsh industrial environments. |
| format | Article |
| id | doaj-art-cd68e6bf587a4db5945ceb18e7402751 |
| institution | OA Journals |
| issn | 2055-7434 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Microsystems & Nanoengineering |
| spelling | doaj-art-cd68e6bf587a4db5945ceb18e74027512025-08-20T01:47:29ZengNature Publishing GroupMicrosystems & Nanoengineering2055-74342025-04-0111111310.1038/s41378-025-00929-zDevelopment of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environmentsLukang Wang0Nuo Wan1Yu Yang2Yabing Wang3You Zhao4Jiaoyang Zhu5Minye Yang6Yi Lyu7Ming Liu8Yulong Zhao9Department of Hepatobiliary Surgery, National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, The First Affiliated Hospital of Xi’an Jiaotong UniversityInstitute of Xi’an Aerospace Solid Propulsion Technology, Academy of Aerospace Propulsion TechnologyState Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong UniversityState Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong UniversityState Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong UniversitySchool Of Mechatronic Engineering, Xi’an Technological UniversityState Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and EngineeringDepartment of Hepatobiliary Surgery, National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, The First Affiliated Hospital of Xi’an Jiaotong UniversityState Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and EngineeringState Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong UniversityAbstract In many industries, there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations. Utilizing the piezoresistive effect of heavily doped N-type 4H-SiC, we proposed a family design of eight pressure sensor chip structures featuring different diaphragm shapes of circles and squares, along with different piezoresistor configurations. The 4H-SiC piezoresistive pressure sensor was developed using micro-electromechanical systems (MEMS) technology and encapsulated in a leadless package structure via low-stress connection achieved by glass frit sintering. The 4H-SiC pressure sensor demonstrates impressive performance, exhibiting an accuracy of 0.18% FSO and a temperature tolerance range from −50 to 600 °C, with a temperature coefficient of zero output as low as 0.08%/°C at 600 °C. Furthermore, the developed sensor shows remarkable stability under conditions of high-temperature vibration coupling. The advancement of this family of 4H-SiC pressure sensors provides a promising solution for pressure measurement in harsh industrial environments.https://doi.org/10.1038/s41378-025-00929-z |
| spellingShingle | Lukang Wang Nuo Wan Yu Yang Yabing Wang You Zhao Jiaoyang Zhu Minye Yang Yi Lyu Ming Liu Yulong Zhao Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments Microsystems & Nanoengineering |
| title | Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments |
| title_full | Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments |
| title_fullStr | Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments |
| title_full_unstemmed | Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments |
| title_short | Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments |
| title_sort | development of leadless packaged heavily doped n type 4h sic pressure sensor family for harsh environments |
| url | https://doi.org/10.1038/s41378-025-00929-z |
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