Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications
In this study, we investigated the basic characteristics of the n- and p-type gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The devices exhibited steep subthreshold slope (< 1 mV/dec) and realized ultralow voltage swing (< 0.2 V) from the low...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10855637/ |
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| author | Haruki Yonezaki Takayuki Mori Jiro Ida |
| author_facet | Haruki Yonezaki Takayuki Mori Jiro Ida |
| author_sort | Haruki Yonezaki |
| collection | DOAJ |
| description | In this study, we investigated the basic characteristics of the n- and p-type gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The devices exhibited steep subthreshold slope (< 1 mV/dec) and realized ultralow voltage swing (< 0.2 V) from the low leakage current level (< 1 pA) and the high on-current (> <inline-formula> <tex-math notation="LaTeX">$1~\mu $ </tex-math></inline-formula>A) at low drain voltage (=± 0.1 V), respectively. GCCI SOI-Tr has the potential for application as an ultralow power complementary metal-oxide-semiconductor (MOS). Owing to its BiMOS-like structure, GCCI SOI-Tr is compatible with the amplification ability and high impedance by a gate. Therefore, this device is promising for ultralow-power applications. |
| format | Article |
| id | doaj-art-ccccdbf494a746d48b1c907e25ad58ca |
| institution | DOAJ |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-ccccdbf494a746d48b1c907e25ad58ca2025-08-20T02:53:06ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011389289810.1109/JEDS.2025.352917610855637Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power ApplicationsHaruki Yonezaki0https://orcid.org/0009-0007-7284-5837Takayuki Mori1https://orcid.org/0000-0002-9199-0868Jiro Ida2https://orcid.org/0000-0002-9161-1725Kanazawa Institute of Technology, Nonoichi, JapanKanazawa Institute of Technology, Nonoichi, JapanKanazawa Institute of Technology, Tokyo, JapanIn this study, we investigated the basic characteristics of the n- and p-type gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The devices exhibited steep subthreshold slope (< 1 mV/dec) and realized ultralow voltage swing (< 0.2 V) from the low leakage current level (< 1 pA) and the high on-current (> <inline-formula> <tex-math notation="LaTeX">$1~\mu $ </tex-math></inline-formula>A) at low drain voltage (=± 0.1 V), respectively. GCCI SOI-Tr has the potential for application as an ultralow power complementary metal-oxide-semiconductor (MOS). Owing to its BiMOS-like structure, GCCI SOI-Tr is compatible with the amplification ability and high impedance by a gate. Therefore, this device is promising for ultralow-power applications.https://ieeexplore.ieee.org/document/10855637/CMOSfeedbackfloating body effectSOI MOSFETsteep subthreshold slope |
| spellingShingle | Haruki Yonezaki Takayuki Mori Jiro Ida Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications IEEE Journal of the Electron Devices Society CMOS feedback floating body effect SOI MOSFET steep subthreshold slope |
| title | Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications |
| title_full | Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications |
| title_fullStr | Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications |
| title_full_unstemmed | Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications |
| title_short | Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications |
| title_sort | steep subthreshold slope gate controlled carrier injection soi transistor for ultralow power applications |
| topic | CMOS feedback floating body effect SOI MOSFET steep subthreshold slope |
| url | https://ieeexplore.ieee.org/document/10855637/ |
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