Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications
In this study, we investigated the basic characteristics of the n- and p-type gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The devices exhibited steep subthreshold slope (< 1 mV/dec) and realized ultralow voltage swing (< 0.2 V) from the low...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10855637/ |
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| Summary: | In this study, we investigated the basic characteristics of the n- and p-type gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The devices exhibited steep subthreshold slope (< 1 mV/dec) and realized ultralow voltage swing (< 0.2 V) from the low leakage current level (< 1 pA) and the high on-current (> <inline-formula> <tex-math notation="LaTeX">$1~\mu $ </tex-math></inline-formula>A) at low drain voltage (=± 0.1 V), respectively. GCCI SOI-Tr has the potential for application as an ultralow power complementary metal-oxide-semiconductor (MOS). Owing to its BiMOS-like structure, GCCI SOI-Tr is compatible with the amplification ability and high impedance by a gate. Therefore, this device is promising for ultralow-power applications. |
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| ISSN: | 2168-6734 |