Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Abstract Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law. Due to its separation of writing and reading channels, the 3‐terminal device design significantly improves the device enduran...

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Bibliographic Details
Main Authors: Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
Series:Advanced Electronic Materials
Subjects:
field‐free switching
magnetic random‐access memory
magnetic tunnel junction
spin‐orbit torque
topological insulators
Online Access:https://doi.org/10.1002/aelm.202500022
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