Novel Bidirectional ESD Circuit for GaN HEMT

Novel Bidirectional ESD Circuit for GaN HEMT

In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode. During the ESD pulse, a discharging channel in the proposed ESD clamp is built and the gate to so...

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Bibliographic Details
Main Authors: Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Micromachines
Subjects:
ESD
GaN
diode
p-GaN HEMT
Online Access:https://www.mdpi.com/2072-666X/16/2/129
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