Novel Bidirectional ESD Circuit for GaN HEMT
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode. During the ESD pulse, a discharging channel in the proposed ESD clamp is built and the gate to so...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/16/2/129 |
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| author | Pengfei Zhang Cheng Yang Jingyu Shen Xiaorong Luo Gaoqiang Deng Shuxiang Sun Yuxi Wei Jie Wei |
| author_facet | Pengfei Zhang Cheng Yang Jingyu Shen Xiaorong Luo Gaoqiang Deng Shuxiang Sun Yuxi Wei Jie Wei |
| author_sort | Pengfei Zhang |
| collection | DOAJ |
| description | In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode. During the ESD pulse, a discharging channel in the proposed ESD clamp is built and the gate to source voltage for p-GaN HEMTs is clamped at safety value. Based on the experimental verification, the proposed ESD clamps have bidirectional protection functionality by being triggered by a required voltage and exhibit a high secondary breakdown current in both forward and reverse transient ESD events. Meanwhile, the proposed ESD clamp circuit can decrease the power loss in a static state. |
| format | Article |
| id | doaj-art-cca6e76265d64185898ea3da4151145a |
| institution | DOAJ |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-cca6e76265d64185898ea3da4151145a2025-08-20T02:44:50ZengMDPI AGMicromachines2072-666X2025-01-0116212910.3390/mi16020129Novel Bidirectional ESD Circuit for GaN HEMTPengfei Zhang0Cheng Yang1Jingyu Shen2Xiaorong Luo3Gaoqiang Deng4Shuxiang Sun5Yuxi Wei6Jie Wei7School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaChina Resources Microelectronics (Chongqing) Limited, Chongqing 401331, ChinaSchool of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaSchool of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaIn this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode. During the ESD pulse, a discharging channel in the proposed ESD clamp is built and the gate to source voltage for p-GaN HEMTs is clamped at safety value. Based on the experimental verification, the proposed ESD clamps have bidirectional protection functionality by being triggered by a required voltage and exhibit a high secondary breakdown current in both forward and reverse transient ESD events. Meanwhile, the proposed ESD clamp circuit can decrease the power loss in a static state.https://www.mdpi.com/2072-666X/16/2/129ESDGaNdiodep-GaN HEMT |
| spellingShingle | Pengfei Zhang Cheng Yang Jingyu Shen Xiaorong Luo Gaoqiang Deng Shuxiang Sun Yuxi Wei Jie Wei Novel Bidirectional ESD Circuit for GaN HEMT Micromachines ESD GaN diode p-GaN HEMT |
| title | Novel Bidirectional ESD Circuit for GaN HEMT |
| title_full | Novel Bidirectional ESD Circuit for GaN HEMT |
| title_fullStr | Novel Bidirectional ESD Circuit for GaN HEMT |
| title_full_unstemmed | Novel Bidirectional ESD Circuit for GaN HEMT |
| title_short | Novel Bidirectional ESD Circuit for GaN HEMT |
| title_sort | novel bidirectional esd circuit for gan hemt |
| topic | ESD GaN diode p-GaN HEMT |
| url | https://www.mdpi.com/2072-666X/16/2/129 |
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