Statistical investigation of characteristic parameters for Au/p-TlInS2/n-InP pseudo Schottky junctions produced under the same conditions
Pseudo-Schottky junctions (PSJs) on moderately doped (MD) n-InP were fabricated by introducing a thin p-TlInS2 counter layer before the assembly of gold rectifying contact. Successively annealing treatment was applied to create a stable inversion layer at the metal-semiconductor (MS) interface. PSJs...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Atatürk University
2024-06-01
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| Series: | Journal of Anatolian Physics and Astronomy |
| Subjects: | |
| Online Access: | https://dergipark.org.tr/tr/download/article-file/4026724 |
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