Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells
A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/836284 |
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| author | N. A. Kalyuzhnyy V. V. Evstropov V. M. Lantratov S. A. Mintairov M. A. Mintairov A. S. Gudovskikh A. Luque V. M. Andreev |
| author_facet | N. A. Kalyuzhnyy V. V. Evstropov V. M. Lantratov S. A. Mintairov M. A. Mintairov A. S. Gudovskikh A. Luque V. M. Andreev |
| author_sort | N. A. Kalyuzhnyy |
| collection | DOAJ |
| description | A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested. |
| format | Article |
| id | doaj-art-cbf0c45c75b84d88977dc4ccd7fb5a19 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-cbf0c45c75b84d88977dc4ccd7fb5a192025-02-03T05:54:03ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/836284836284Characterization of the Manufacturing Processes to Grow Triple-Junction Solar CellsN. A. Kalyuzhnyy0V. V. Evstropov1V. M. Lantratov2S. A. Mintairov3M. A. Mintairov4A. S. Gudovskikh5A. Luque6V. M. Andreev7Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, RussiaIoffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, RussiaA number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested.http://dx.doi.org/10.1155/2014/836284 |
| spellingShingle | N. A. Kalyuzhnyy V. V. Evstropov V. M. Lantratov S. A. Mintairov M. A. Mintairov A. S. Gudovskikh A. Luque V. M. Andreev Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells International Journal of Photoenergy |
| title | Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells |
| title_full | Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells |
| title_fullStr | Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells |
| title_full_unstemmed | Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells |
| title_short | Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells |
| title_sort | characterization of the manufacturing processes to grow triple junction solar cells |
| url | http://dx.doi.org/10.1155/2014/836284 |
| work_keys_str_mv | AT nakalyuzhnyy characterizationofthemanufacturingprocessestogrowtriplejunctionsolarcells AT vvevstropov characterizationofthemanufacturingprocessestogrowtriplejunctionsolarcells AT vmlantratov characterizationofthemanufacturingprocessestogrowtriplejunctionsolarcells AT samintairov characterizationofthemanufacturingprocessestogrowtriplejunctionsolarcells AT mamintairov characterizationofthemanufacturingprocessestogrowtriplejunctionsolarcells AT asgudovskikh characterizationofthemanufacturingprocessestogrowtriplejunctionsolarcells AT aluque characterizationofthemanufacturingprocessestogrowtriplejunctionsolarcells AT vmandreev characterizationofthemanufacturingprocessestogrowtriplejunctionsolarcells |