Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices
This article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET. For this, a numerical device simulator has been applied. Our investigation discloses that JL device sho...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2025-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | https://www.epj-conferences.org/articles/epjconf/pdf/2025/10/epjconf_iemphys2025_01005.pdf |
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