Multiscale simulation and machine learning facilitated design of two-dimensional nanomaterials-based tunnel field-effect transistors: A review

Traditional transistors based on complementary metal–oxide–semiconductor and metal–oxide–semiconductor field-effect transistors are facing significant limitations as device scaling reaches the limits of Moore’s law. These limitations include increased leakage currents, pronounced short-channel effec...

Full description

Saved in:
Bibliographic Details
Main Authors: Chloe Isabella Tsang, Haihui Pu, Junhong Chen
Format: Article
Language:English
Published: AIP Publishing LLC 2025-03-01
Series:APL Machine Learning
Online Access:http://dx.doi.org/10.1063/5.0240004
Tags: Add Tag
No Tags, Be the first to tag this record!