Multiscale simulation and machine learning facilitated design of two-dimensional nanomaterials-based tunnel field-effect transistors: A review
Traditional transistors based on complementary metal–oxide–semiconductor and metal–oxide–semiconductor field-effect transistors are facing significant limitations as device scaling reaches the limits of Moore’s law. These limitations include increased leakage currents, pronounced short-channel effec...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | APL Machine Learning |
| Online Access: | http://dx.doi.org/10.1063/5.0240004 |
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