Performance and Scalability of Strain Engineered 2D MoTe<sub>2</sub> Phase-Change Memristors

Performance and Scalability of Strain Engineered 2D MoTe<sub>2</sub> Phase-Change Memristors

This work presents a performance optimization and scalability study of a two-dimensional vertical molybdenum ditelluride (MoTe2) phase-change memristor. The device switches between the semimetallic (1T&#x2019;) and semiconducting (2H) states under an electric field. Process-induced strain engine...

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Bibliographic Details
Main Authors: Maria Vitoria Guimaraes Leal, Ahmad Azizimanesh, Nazmul Hasan, Stephen M. Wu
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Memristor
two-dimensional materials
strain engineering
phase-change memory
device fabrication
Online Access:https://ieeexplore.ieee.org/document/10945750/
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