Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES

Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES

Abstract We present a fundamental study of the band alignment at the interface of HfZrO4 (HZO) with Ge-doped Ga2O3. Ge is an alternative n-type dopant for the wide band gap Ga2O3 due to its shallow donor level and favorable MBE growth conditions. In the perspective of using the ferroelectric polariz...

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Bibliographic Details
Main Authors: Anthony Boucly, Tyson C. Back, Thaddeus J. Asel, Brenton A. Noesges, Amber N. Reed, Sabyasachi Ganguli, Jonathan Ludwick, Cynthia Bowers, Krishnamurthy Mahalingam, Sylvia Matzen, Nick Barrett
Format: Article
Language:English
Published: Nature Portfolio 2025-03-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-025-90555-6
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