Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent μc-SiOx:H Doped Layers in μc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells
The enhancement of optical absorption of silicon thin-film solar cells by the p- and n-type μc-SiOx:H as doped and functional layers was presented. The effects of deposition conditions and oxygen content on optical, electrical, and structural properties of μc-SiOx:H films were also discussed. Regard...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2016/8172518 |
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| author | Pei-Ling Chen Po-Wei Chen Min-Wen Hsiao Cheng-Hang Hsu Chuang-Chuang Tsai |
| author_facet | Pei-Ling Chen Po-Wei Chen Min-Wen Hsiao Cheng-Hang Hsu Chuang-Chuang Tsai |
| author_sort | Pei-Ling Chen |
| collection | DOAJ |
| description | The enhancement of optical absorption of silicon thin-film solar cells by the p- and n-type μc-SiOx:H as doped and functional layers was presented. The effects of deposition conditions and oxygen content on optical, electrical, and structural properties of μc-SiOx:H films were also discussed. Regarding the doped μc-SiOx:H films, the wide optical band gap (E04) of 2.33 eV while maintaining a high conductivity of 0.2 S/cm could be obtained with oxygen incorporation of 20 at.%. Compared to the conventional μc-Si:H(p) as window layer in μc-Si:H single-junction solar cells, the application of μc-SiOx:H(p) increased the VOC and led to a significant enhancement in the short-wavelength spectral response. Meanwhile, the employment of μc-SiOx:H(n) instead of conventional ITO as back reflecting layer (BRL) enhanced the external quantum efficiency (EQE) of μc-Si:H single-junction cell in the long-wavelength region, leading to a relative efficiency gain of 10%. Compared to the reference cell, the optimized a-Si:H/μc-Si:H tandem cell by applying p- and n-type μc-SiOx:H films achieved a VOC of 1.37 V, JSC of 10.55 mA/cm2, FF of 73.67%, and efficiency of 10.51%, which was a relative enhancement of 16%. |
| format | Article |
| id | doaj-art-cb3e04a7c9914fdc83de3e817febb6b6 |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
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| series | International Journal of Photoenergy |
| spelling | doaj-art-cb3e04a7c9914fdc83de3e817febb6b62025-08-20T02:19:47ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2016-01-01201610.1155/2016/81725188172518Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent μc-SiOx:H Doped Layers in μc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar CellsPei-Ling Chen0Po-Wei Chen1Min-Wen Hsiao2Cheng-Hang Hsu3Chuang-Chuang Tsai4Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, TaiwanDepartment of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, TaiwanDepartment of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, TaiwanDepartment of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, TaiwanDepartment of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, TaiwanThe enhancement of optical absorption of silicon thin-film solar cells by the p- and n-type μc-SiOx:H as doped and functional layers was presented. The effects of deposition conditions and oxygen content on optical, electrical, and structural properties of μc-SiOx:H films were also discussed. Regarding the doped μc-SiOx:H films, the wide optical band gap (E04) of 2.33 eV while maintaining a high conductivity of 0.2 S/cm could be obtained with oxygen incorporation of 20 at.%. Compared to the conventional μc-Si:H(p) as window layer in μc-Si:H single-junction solar cells, the application of μc-SiOx:H(p) increased the VOC and led to a significant enhancement in the short-wavelength spectral response. Meanwhile, the employment of μc-SiOx:H(n) instead of conventional ITO as back reflecting layer (BRL) enhanced the external quantum efficiency (EQE) of μc-Si:H single-junction cell in the long-wavelength region, leading to a relative efficiency gain of 10%. Compared to the reference cell, the optimized a-Si:H/μc-Si:H tandem cell by applying p- and n-type μc-SiOx:H films achieved a VOC of 1.37 V, JSC of 10.55 mA/cm2, FF of 73.67%, and efficiency of 10.51%, which was a relative enhancement of 16%.http://dx.doi.org/10.1155/2016/8172518 |
| spellingShingle | Pei-Ling Chen Po-Wei Chen Min-Wen Hsiao Cheng-Hang Hsu Chuang-Chuang Tsai Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent μc-SiOx:H Doped Layers in μc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells International Journal of Photoenergy |
| title | Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent μc-SiOx:H Doped Layers in μc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells |
| title_full | Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent μc-SiOx:H Doped Layers in μc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells |
| title_fullStr | Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent μc-SiOx:H Doped Layers in μc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells |
| title_full_unstemmed | Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent μc-SiOx:H Doped Layers in μc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells |
| title_short | Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent μc-SiOx:H Doped Layers in μc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells |
| title_sort | wide range enhancement of spectral response by highly conductive and transparent μc siox h doped layers in μc si h and a si h μc si h thin film solar cells |
| url | http://dx.doi.org/10.1155/2016/8172518 |
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