Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent Properties

The key issue for a wide application of solar energy is the possibility to establish an innovative photovoltaic technology that allows a more efficient energy conversion. In this direction, the use of additional layers in the well‐established silicon‐based modules represents a challenging strategy....

Full description

Saved in:
Bibliographic Details
Main Authors: Anna Lucia Pellegrino, Francesca Lo Presti, Francesca Loschi, Adolfo Speghini, Graziella Malandrino
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Advanced Photonics Research
Subjects:
Online Access:https://doi.org/10.1002/adpr.202400153
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1849720210615959552
author Anna Lucia Pellegrino
Francesca Lo Presti
Francesca Loschi
Adolfo Speghini
Graziella Malandrino
author_facet Anna Lucia Pellegrino
Francesca Lo Presti
Francesca Loschi
Adolfo Speghini
Graziella Malandrino
author_sort Anna Lucia Pellegrino
collection DOAJ
description The key issue for a wide application of solar energy is the possibility to establish an innovative photovoltaic technology that allows a more efficient energy conversion. In this direction, the use of additional layers in the well‐established silicon‐based modules represents a challenging strategy. In this context, the present work is devoted to the optimization of a downshifting (DS) system made of the NaGdF4 matrix in the form of thin film as a host material for the europium‐luminescent ions. The Eu‐doped NaGdF4 system is fabricated through a sol–gel approach starting from a mixture of Na(hfa)•tetraglyme, Gd(hfa)3•diglyme, and Eu(hfa)3•diglyme in ethanol solution. The operative parameters are finely tuned to pursue the formation of compact and polycrystalline films. Particularly, the annealing treatment, the nature of the substrate, and the doping ion percentage are the key parameters for the reproducible and selective formation of NaGdF4 in the form of the beta (hexagonal) crystal structure with promising luminescent properties. Morphological, structural, and compositional features are deeply studied through field‐emission scanning electron microscopy, X‐ray diffraction analysis, and energy‐dispersive X‐ray analysis, respectively. The luminescence investigations confirm the properties of the Eu‐doped NaGdF4 as DS system.
format Article
id doaj-art-cace8e3211bf4181a9ccade2e9ccdc05
institution DOAJ
issn 2699-9293
language English
publishDate 2025-05-01
publisher Wiley-VCH
record_format Article
series Advanced Photonics Research
spelling doaj-art-cace8e3211bf4181a9ccade2e9ccdc052025-08-20T03:11:58ZengWiley-VCHAdvanced Photonics Research2699-92932025-05-0165n/an/a10.1002/adpr.202400153Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent PropertiesAnna Lucia Pellegrino0Francesca Lo Presti1Francesca Loschi2Adolfo Speghini3Graziella Malandrino4Dipartimento di Scienze Chimiche Università di Catania and INSTM UdR Catania V.le A. Doria 6 95125 Catania ItalyDipartimento di Scienze Chimiche Università di Catania and INSTM UdR Catania V.le A. Doria 6 95125 Catania ItalyNanomaterials Research Group (NRG) ‐ Dipartimento di Biotecnologie Università di Verona and INSTM UdR Verona Strada le Grazie 15 37134 Verona ItalyNanomaterials Research Group (NRG) ‐ Dipartimento di Biotecnologie Università di Verona and INSTM UdR Verona Strada le Grazie 15 37134 Verona ItalyDipartimento di Scienze Chimiche Università di Catania and INSTM UdR Catania V.le A. Doria 6 95125 Catania ItalyThe key issue for a wide application of solar energy is the possibility to establish an innovative photovoltaic technology that allows a more efficient energy conversion. In this direction, the use of additional layers in the well‐established silicon‐based modules represents a challenging strategy. In this context, the present work is devoted to the optimization of a downshifting (DS) system made of the NaGdF4 matrix in the form of thin film as a host material for the europium‐luminescent ions. The Eu‐doped NaGdF4 system is fabricated through a sol–gel approach starting from a mixture of Na(hfa)•tetraglyme, Gd(hfa)3•diglyme, and Eu(hfa)3•diglyme in ethanol solution. The operative parameters are finely tuned to pursue the formation of compact and polycrystalline films. Particularly, the annealing treatment, the nature of the substrate, and the doping ion percentage are the key parameters for the reproducible and selective formation of NaGdF4 in the form of the beta (hexagonal) crystal structure with promising luminescent properties. Morphological, structural, and compositional features are deeply studied through field‐emission scanning electron microscopy, X‐ray diffraction analysis, and energy‐dispersive X‐ray analysis, respectively. The luminescence investigations confirm the properties of the Eu‐doped NaGdF4 as DS system.https://doi.org/10.1002/adpr.202400153Eu‐dopinghexagonal NaGdF4thin filmsX‐ray diffractions
spellingShingle Anna Lucia Pellegrino
Francesca Lo Presti
Francesca Loschi
Adolfo Speghini
Graziella Malandrino
Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent Properties
Advanced Photonics Research
Eu‐doping
hexagonal NaGdF4
thin films
X‐ray diffractions
title Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent Properties
title_full Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent Properties
title_fullStr Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent Properties
title_full_unstemmed Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent Properties
title_short Downshifting Layer of Europium‐Doped NaGdF4: From the Optimization of the Sol–Gel Process to the Luminescent Properties
title_sort downshifting layer of europium doped nagdf4 from the optimization of the sol gel process to the luminescent properties
topic Eu‐doping
hexagonal NaGdF4
thin films
X‐ray diffractions
url https://doi.org/10.1002/adpr.202400153
work_keys_str_mv AT annaluciapellegrino downshiftinglayerofeuropiumdopednagdf4fromtheoptimizationofthesolgelprocesstotheluminescentproperties
AT francescalopresti downshiftinglayerofeuropiumdopednagdf4fromtheoptimizationofthesolgelprocesstotheluminescentproperties
AT francescaloschi downshiftinglayerofeuropiumdopednagdf4fromtheoptimizationofthesolgelprocesstotheluminescentproperties
AT adolfospeghini downshiftinglayerofeuropiumdopednagdf4fromtheoptimizationofthesolgelprocesstotheluminescentproperties
AT graziellamalandrino downshiftinglayerofeuropiumdopednagdf4fromtheoptimizationofthesolgelprocesstotheluminescentproperties