Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation
Insufficient selectivity is a major constraint to the further development of metal oxide semiconductor (MOS) sensors for chemical warfare agents, and this paper proposed an improved scheme combining catalytic layer/gas-sensitive layer laminated structure with temperature dynamic modulation for the M...
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2025-01-01
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| Online Access: | https://www.mdpi.com/1424-8220/25/2/525 |
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| author | Yadong Liu Siyue Zhao Lijuan You Yong Xu Renjun Si Shunping Zhang |
| author_facet | Yadong Liu Siyue Zhao Lijuan You Yong Xu Renjun Si Shunping Zhang |
| author_sort | Yadong Liu |
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| description | Insufficient selectivity is a major constraint to the further development of metal oxide semiconductor (MOS) sensors for chemical warfare agents, and this paper proposed an improved scheme combining catalytic layer/gas-sensitive layer laminated structure with temperature dynamic modulation for the Mustard gas (HD) MOS sensor. Mustard gas simulant 2-Chloroethyl ethyl sulfide (2-CEES) was used as the target gas, (Pt + Pd + Rh)@Al<sub>2</sub>O<sub>3</sub> as the catalytic layer material, (Pt + Rh)@WO<sub>3</sub> as the gas-sensitive layer material, the (Pt + Pd + Rh)@Al<sub>2</sub>O<sub>3</sub>/(Pt + Rh)@WO<sub>3</sub> sensor was prepared, and the sensor was tested for 2-CEES and 12 battlefield environment simulation gases under temperature dynamic modulation. The results showed that the sensor only showed obvious characteristic peaks in the resistance response curves to HD under certain conditions (100–400 °C, the highest temperature was held for 1 s and the lowest temperature was held for 2 s), and its peak height reached 6.12, which was far higher than other gases, thus realizing the high selectivity of the MOS sensor to 2-CEES. Meanwhile, the sensor also showed good sensitivity, detection limits, response/recovery times, anti-interference, and stability, which further verified the feasibility of the improved scheme. |
| format | Article |
| id | doaj-art-ca8e98ad668340e088ee8aa591350b29 |
| institution | Kabale University |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-01-01 |
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| spelling | doaj-art-ca8e98ad668340e088ee8aa591350b292025-01-24T13:49:14ZengMDPI AGSensors1424-82202025-01-0125252510.3390/s25020525Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic ModulationYadong Liu0Siyue Zhao1Lijuan You2Yong Xu3Renjun Si4Shunping Zhang5Institute of NBC Defence, Beijing 102205, ChinaInstitute of NBC Defence, Beijing 102205, ChinaInstitute of NBC Defence, Beijing 102205, ChinaInstitute of NBC Defence, Beijing 102205, ChinaState Key Laboratory of Material Processing and Die & Mould Technology, Department of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaInstitute of NBC Defence, Beijing 102205, ChinaInsufficient selectivity is a major constraint to the further development of metal oxide semiconductor (MOS) sensors for chemical warfare agents, and this paper proposed an improved scheme combining catalytic layer/gas-sensitive layer laminated structure with temperature dynamic modulation for the Mustard gas (HD) MOS sensor. Mustard gas simulant 2-Chloroethyl ethyl sulfide (2-CEES) was used as the target gas, (Pt + Pd + Rh)@Al<sub>2</sub>O<sub>3</sub> as the catalytic layer material, (Pt + Rh)@WO<sub>3</sub> as the gas-sensitive layer material, the (Pt + Pd + Rh)@Al<sub>2</sub>O<sub>3</sub>/(Pt + Rh)@WO<sub>3</sub> sensor was prepared, and the sensor was tested for 2-CEES and 12 battlefield environment simulation gases under temperature dynamic modulation. The results showed that the sensor only showed obvious characteristic peaks in the resistance response curves to HD under certain conditions (100–400 °C, the highest temperature was held for 1 s and the lowest temperature was held for 2 s), and its peak height reached 6.12, which was far higher than other gases, thus realizing the high selectivity of the MOS sensor to 2-CEES. Meanwhile, the sensor also showed good sensitivity, detection limits, response/recovery times, anti-interference, and stability, which further verified the feasibility of the improved scheme.https://www.mdpi.com/1424-8220/25/2/525MOS sensor2-CEESselectivitycharacteristic peak |
| spellingShingle | Yadong Liu Siyue Zhao Lijuan You Yong Xu Renjun Si Shunping Zhang Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation Sensors MOS sensor 2-CEES selectivity characteristic peak |
| title | Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation |
| title_full | Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation |
| title_fullStr | Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation |
| title_full_unstemmed | Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation |
| title_short | Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation |
| title_sort | improving the selectivity of metal oxide semiconductor sensors for mustard gas simulant 2 chloroethyl ethyl sulfide by combining the laminated structure and temperature dynamic modulation |
| topic | MOS sensor 2-CEES selectivity characteristic peak |
| url | https://www.mdpi.com/1424-8220/25/2/525 |
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